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Article: Quantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidation

TitleQuantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidation
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2004, v. 95 n. 7, p. 3422-3426 How to Cite?
AbstractQuantum well (QW) intermixing was carried out by post-growth rapid thermal annealing in InGaAsN/GaAs QW laser structures grown by solid-source molecular-beam epitaxy. The intensity and width of the photoluminescence peak showed a dependence on annealing temperature and time, and the maximum intensity and minimum linewidth were obtained after the wafer was annealed at 670 °C for 60 s. The peak luminescence energy blueshifted with increasing annealing time, although it plateaued at an annealing time that corresponded to that yielding the maximum luminescence intensity. The diffusion coefficient for indium was determined from a comparison between experimental data and modeling, but showed that QW intermixing alone was not sufficient to account for the relatively large blueshift after annealing. Defects related to the incorporation of nitrogen in the QW layer were responsible for the low photoluminescence efficiency in the as-grown samples and were annealed out during rapid thermal annealing. During annealing, nitrogen interstitials moved to vacancy sites within the QW and thus suppressed QW intermixing. After annealing wafers under conditions giving the maximum luminescence intensity, lasers were fabricated with pulsed anodic oxidation. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42952
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorQu, Yen_HK
dc.contributor.authorLiu, CYen_HK
dc.contributor.authorYuan, Sen_HK
dc.contributor.authorWang, SZen_HK
dc.contributor.authorYoon, SFen_HK
dc.contributor.authorChan, CYen_HK
dc.contributor.authorHong, MHen_HK
dc.date.accessioned2007-03-23T04:35:22Z-
dc.date.available2007-03-23T04:35:22Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal of Applied Physics, 2004, v. 95 n. 7, p. 3422-3426en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42952-
dc.description.abstractQuantum well (QW) intermixing was carried out by post-growth rapid thermal annealing in InGaAsN/GaAs QW laser structures grown by solid-source molecular-beam epitaxy. The intensity and width of the photoluminescence peak showed a dependence on annealing temperature and time, and the maximum intensity and minimum linewidth were obtained after the wafer was annealed at 670 °C for 60 s. The peak luminescence energy blueshifted with increasing annealing time, although it plateaued at an annealing time that corresponded to that yielding the maximum luminescence intensity. The diffusion coefficient for indium was determined from a comparison between experimental data and modeling, but showed that QW intermixing alone was not sufficient to account for the relatively large blueshift after annealing. Defects related to the incorporation of nitrogen in the QW layer were responsible for the low photoluminescence efficiency in the as-grown samples and were annealed out during rapid thermal annealing. During annealing, nitrogen interstitials moved to vacancy sites within the QW and thus suppressed QW intermixing. After annealing wafers under conditions giving the maximum luminescence intensity, lasers were fabricated with pulsed anodic oxidation. © 2004 American Institute of Physics.en_HK
dc.format.extent85995 bytes-
dc.format.extent26112 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleQuantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=95&issue=7&spage=3422&epage=3426&date=2004&atitle=Quantum+well+intermixing+for+the+fabrication+of+InGaAsN/GaAs+lasers+with+pulsed+anodic+oxidationen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1651322en_HK
dc.identifier.scopuseid_2-s2.0-1942489204-
dc.identifier.hkuros89881-
dc.identifier.isiWOS:000220342700026-

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