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Article: Optimum mask and source patterns to print a given shape

TitleOptimum mask and source patterns to print a given shape
Authors
KeywordsOff-axis illumination
Global optimization
Source optimization
Ret
Opc
Issue Date2002
PublisherS P I E - International Society for Optical Engineering.
Citation
Journal of Microlithography, Microfabrication, and Microsystems, 2002, v. 1 n. 1, p. 13-30 How to Cite?
AbstractNew degrees of freedom can be optimized in mask shapes when the source is also adjustable, because required image symmetries can be provided by the source rather than the collected wave front. The optimized mask will often consist of novel sets of shapes that are quite different in layout from the target integrated circuit patterns. This implies that the optimization algorithm should have good global convergence properties, since the target patterns may not be a suitable starting solution. We have developed an algorithm that can optimize mask and source without using a starting design. Examples are shown where the process window obtained is between two and six times larger than that achieved with standard reticle enhancement techniques (RET). The optimized masks require phase shift, but no trim mask is used. Thus far we can only optimize two-dimensional patterns over small fields (periodicities of ;1 mm or less), though patterns in two separate fields can be jointly optimized for maximum common window under a single source. We also discuss mask optimization with fixed source, source optimization with fixed mask, and the retargeting of designs in different mask regions to provide a common exposure level. © 2002 Society of Photo-Optical Instrumentation Engineers.
Persistent Identifierhttp://hdl.handle.net/10722/42897
ISSN
2009 Impact Factor: 0.541

 

DC FieldValueLanguage
dc.contributor.authorRosenbluth, AEen_HK
dc.contributor.authorBukofsky, Sen_HK
dc.contributor.authorFonseca, Sen_HK
dc.contributor.authorHibbs, Men_HK
dc.contributor.authorLai, Ken_HK
dc.contributor.authorMolless, Aen_HK
dc.contributor.authorSingh, RNen_HK
dc.contributor.authorWong, AKKen_HK
dc.date.accessioned2007-03-23T04:34:15Z-
dc.date.available2007-03-23T04:34:15Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal of Microlithography, Microfabrication, and Microsystems, 2002, v. 1 n. 1, p. 13-30en_HK
dc.identifier.issn1537-1646en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42897-
dc.description.abstractNew degrees of freedom can be optimized in mask shapes when the source is also adjustable, because required image symmetries can be provided by the source rather than the collected wave front. The optimized mask will often consist of novel sets of shapes that are quite different in layout from the target integrated circuit patterns. This implies that the optimization algorithm should have good global convergence properties, since the target patterns may not be a suitable starting solution. We have developed an algorithm that can optimize mask and source without using a starting design. Examples are shown where the process window obtained is between two and six times larger than that achieved with standard reticle enhancement techniques (RET). The optimized masks require phase shift, but no trim mask is used. Thus far we can only optimize two-dimensional patterns over small fields (periodicities of ;1 mm or less), though patterns in two separate fields can be jointly optimized for maximum common window under a single source. We also discuss mask optimization with fixed source, source optimization with fixed mask, and the retargeting of designs in different mask regions to provide a common exposure level. © 2002 Society of Photo-Optical Instrumentation Engineers.en_HK
dc.format.extent1738645 bytes-
dc.format.extent25088 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Microlithography, Microfabrication, and Microsystems. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCopyright 2002 Society of Photo-Optical Instrumentation Engineers. This paper was published in Journal of Microlithography, Microfabrication, and Microsystems, 2002, v. 1 n. 1, p. 13-30 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en_HK
dc.subjectOff-axis illuminationen_HK
dc.subjectGlobal optimizationen_HK
dc.subjectSource optimizationen_HK
dc.subjectReten_HK
dc.subjectOpcen_HK
dc.titleOptimum mask and source patterns to print a given shapeen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1537-1646&volume=1&issue=1&spage=13&epage=30&date=2002&atitle=Optimum+mask+and+source+patterns+to+print+a+given+shapeen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/1.1448500en_HK
dc.identifier.scopuseid_2-s2.0-71549126234-
dc.identifier.hkuros71720-

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