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Article: Spreading-resistance temperature sensor on silicon-on-insulator

TitleSpreading-resistance temperature sensor on silicon-on-insulator
Authors
Lai, PTLi, BChan, CLSin, JKO
Issue Date1999
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1999, v. 20 n. 11, p. 589-591 How to Cite?
DOI: http://dx.doi.org/10.1109/55.798053
AbstractA spreading-resistance temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) substrate and achieves promising characteristics as compared with similar SRT sensor on bulk silicon wafer. Moreover, experimental results show that the maximum operating temperature of thin-film (1.2 μm) SOI SRT sensor can reach 450 °C, much higher than 350 °C of thick-film (10 μm) SOI SRT sensor under the same current level. With complete oxide isolation, this sensor structure can be potentially used in low-power integrated sensors operating at temperatures as high as 450 °C.
Persistent Identifierhttp://hdl.handle.net/10722/42851
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000083431700016
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, Ben_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorSin, JKOen_HK
dc.date.accessioned2007-03-23T04:33:24Z-
dc.date.available2007-03-23T04:33:24Z-
dc.date.issued1999en_HK
dc.identifier.citationIeee Electron Device Letters, 1999, v. 20 n. 11, p. 589-591en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42851-
dc.description.abstractA spreading-resistance temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) substrate and achieves promising characteristics as compared with similar SRT sensor on bulk silicon wafer. Moreover, experimental results show that the maximum operating temperature of thin-film (1.2 μm) SOI SRT sensor can reach 450 °C, much higher than 350 °C of thick-film (10 μm) SOI SRT sensor under the same current level. With complete oxide isolation, this sensor structure can be potentially used in low-power integrated sensors operating at temperatures as high as 450 °C.en_HK
dc.format.extent46058 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleSpreading-resistance temperature sensor on silicon-on-insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=20&issue=11&spage=589&epage=591&date=1999&atitle=Spreading-resistance+temperature+sensor+on+silicon-on-insulatoren_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.798053en_HK
dc.identifier.scopuseid_2-s2.0-0033221254en_HK
dc.identifier.hkuros54575-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033221254&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue11en_HK
dc.identifier.spage589en_HK
dc.identifier.epage591en_HK
dc.identifier.isiWOS:000083431700016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, B=26643217800en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK
dc.identifier.scopusauthoridSin, JKO=7103312667en_HK
dc.identifier.issnl0741-3106-

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