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Article: A new lateral trench-gate conductivity modulated power transistor

TitleA new lateral trench-gate conductivity modulated power transistor
Authors
Issue Date1999
PublisherIEEE.
Citation
IEEE Transactions on Electron Devices, 1999, v. 46 n. 8, p. 1788-1793 How to Cite?
AbstractIn this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented. This structure incorporates a trench-gate in which the locations of the channel and source in conventional LIGBT have been interchanged. This channel and source arrangement results in significant improvement in latch-up current density. Experimental results indicate that the static and dynamic latch-up current densities are improved by 2.3 and 4.2 times, respectively, compared to those of the LIGBT at a n+ cathode length of 5 μm. Dependence of the latch-up current density of the LTGBT on the design of the n+ and p+ cathode regions is examined both numerically and experimentally. The maximum controllable current density is found to be increased when the space between the trench-gate and the p+ cathode is reduced. Specifically, as the space is decreased to 2 μm, no latch-up phenomenon was observed. This nonlatch-up characteristic is obtained at the expense of a slight increase (0.8 V) in threshold voltage.
Persistent Identifierhttp://hdl.handle.net/10722/42850
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCai, Jen_HK
dc.contributor.authorSin, JKOen_HK
dc.contributor.authorMok, PKTen_HK
dc.contributor.authorNg, WTen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-03-23T04:33:23Z-
dc.date.available2007-03-23T04:33:23Z-
dc.date.issued1999en_HK
dc.identifier.citationIEEE Transactions on Electron Devices, 1999, v. 46 n. 8, p. 1788-1793en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42850-
dc.description.abstractIn this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented. This structure incorporates a trench-gate in which the locations of the channel and source in conventional LIGBT have been interchanged. This channel and source arrangement results in significant improvement in latch-up current density. Experimental results indicate that the static and dynamic latch-up current densities are improved by 2.3 and 4.2 times, respectively, compared to those of the LIGBT at a n+ cathode length of 5 μm. Dependence of the latch-up current density of the LTGBT on the design of the n+ and p+ cathode regions is examined both numerically and experimentally. The maximum controllable current density is found to be increased when the space between the trench-gate and the p+ cathode is reduced. Specifically, as the space is decreased to 2 μm, no latch-up phenomenon was observed. This nonlatch-up characteristic is obtained at the expense of a slight increase (0.8 V) in threshold voltage.en_HK
dc.format.extent181957 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleA new lateral trench-gate conductivity modulated power transistoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=46&issue=8&spage=1788&epage=1793&date=1999&atitle=A+new+lateral+trench-gate+conductivity+modulated+power+transistoren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.777171en_HK
dc.identifier.scopuseid_2-s2.0-0033169517-
dc.identifier.hkuros54520-
dc.identifier.isiWOS:000081671200030-

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