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Article: Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures
Title | Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures |
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Authors | |
Issue Date | 1998 |
Publisher | IEEE. |
Citation | IEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 629-635 How to Cite? |
Abstract | Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing. |
Persistent Identifier | http://hdl.handle.net/10722/42819 |
ISSN | 2019 Impact Factor: 4.917 2015 SCImago Journal Rankings: 1.632 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yuan, S | en_HK |
dc.contributor.author | Jagadish, C | en_HK |
dc.contributor.author | Kim, Y | en_HK |
dc.contributor.author | Chang, Y | en_HK |
dc.contributor.author | Tan, HH | en_HK |
dc.contributor.author | Cohen, RM | en_HK |
dc.contributor.author | Petravic, M | en_HK |
dc.contributor.author | Dao, LV | en_HK |
dc.contributor.author | Gal, M | en_HK |
dc.contributor.author | Chan, CY | en_HK |
dc.contributor.author | Li, EH | en_HK |
dc.contributor.author | O, JS | en_HK |
dc.contributor.author | Zorg, PS | en_HK |
dc.date.accessioned | 2007-03-23T04:32:47Z | - |
dc.date.available | 2007-03-23T04:32:47Z | - |
dc.date.issued | 1998 | en_HK |
dc.identifier.citation | IEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 629-635 | en_HK |
dc.identifier.issn | 1077-260X | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42819 | - |
dc.description.abstract | Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing. | en_HK |
dc.format.extent | 157217 bytes | - |
dc.format.extent | 31232 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | IEEE. | en_HK |
dc.relation.ispartof | IEEE Journal of Selected Topics in Quantum Electronics | - |
dc.rights | ©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.title | Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1077-260X&volume=4&issue=4&spage=629&epage=635&date=1998&atitle=Anodic-oxide-induced+intermixing+in+GaAs-AlGaAs+quantum-well+and+quantum-wire+structures | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/2944.720473 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0032114949 | - |
dc.identifier.hkuros | 45805 | - |
dc.identifier.isi | WOS:000076177400007 | - |