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Article: Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

TitleAnodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures
Authors
Issue Date1998
PublisherIEEE.
Citation
IEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 629-635 How to Cite?
AbstractAnodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.
Persistent Identifierhttp://hdl.handle.net/10722/42819
ISSN
2015 Impact Factor: 3.466
2015 SCImago Journal Rankings: 1.632

 

DC FieldValueLanguage
dc.contributor.authorYuan, Sen_HK
dc.contributor.authorJagadish, Cen_HK
dc.contributor.authorKim, Yen_HK
dc.contributor.authorChang, Yen_HK
dc.contributor.authorTan, HHen_HK
dc.contributor.authorCohen, RMen_HK
dc.contributor.authorPetravic, Men_HK
dc.contributor.authorDao, LVen_HK
dc.contributor.authorGal, Men_HK
dc.contributor.authorChan, CYen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorO, JSen_HK
dc.contributor.authorZorg, PSen_HK
dc.date.accessioned2007-03-23T04:32:47Z-
dc.date.available2007-03-23T04:32:47Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 629-635en_HK
dc.identifier.issn1077-260Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/42819-
dc.description.abstractAnodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photoluminescence (PL) energy shift due to intermixing. Anodic oxide induced intermixing has been used to enhance quantum-wire PL in the structures grown on V-groove patterned GaAs substrates. This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be driving force for the intermixing.en_HK
dc.format.extent157217 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleAnodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1077-260X&volume=4&issue=4&spage=629&epage=635&date=1998&atitle=Anodic-oxide-induced+intermixing+in+GaAs-AlGaAs+quantum-well+and+quantum-wire+structuresen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/2944.720473en_HK
dc.identifier.scopuseid_2-s2.0-0032114949-
dc.identifier.hkuros45805-

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