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Article: Waveguiding in vertical cavity quantum-well structure defined by ion implantation

TitleWaveguiding in vertical cavity quantum-well structure defined by ion implantation
Authors
Issue Date1998
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=50
Citation
Journal of Lightwave Technology, 1998, v. 16 n. 8, p. 1498-1508 How to Cite?
AbstractA theoretical model is presented for investigating AlGaAs-GaAs quantum-well (QW) vertical cavity waveguides defined by impurity-induced disordering. This model is based on a two-dimensional (2-D) description of the implantation profile to produce quantum-well intermixing. The modal propagation constant, power, and field evolution along the nonuniform circular waveguide is analyzed in terms of the coupled-mode equation. The influence of varying the mask dimension and length of cavity on the fundamental mode operation is studied. In a long cavity, guided mode can be supported by using higher implantation energy, however, a larger mask diameter should be used to maintain strong guiding. Result shows that optical lateral confinement is accomplished, with more than 70% of the power gathered in the cavity. The fraction of power confined in the waveguide is shown to improve by 30% after annealing. In addition, waveguide loss is estimated to be less than 40 cm-1 which results in less than 1 dB for our structure.
Persistent Identifierhttp://hdl.handle.net/10722/42816
ISSN
2015 Impact Factor: 2.567
2015 SCImago Journal Rankings: 2.006
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, ATHen_HK
dc.contributor.authorChan, CCen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:44Z-
dc.date.available2007-03-23T04:32:44Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal of Lightwave Technology, 1998, v. 16 n. 8, p. 1498-1508en_HK
dc.identifier.issn0733-8724en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42816-
dc.description.abstractA theoretical model is presented for investigating AlGaAs-GaAs quantum-well (QW) vertical cavity waveguides defined by impurity-induced disordering. This model is based on a two-dimensional (2-D) description of the implantation profile to produce quantum-well intermixing. The modal propagation constant, power, and field evolution along the nonuniform circular waveguide is analyzed in terms of the coupled-mode equation. The influence of varying the mask dimension and length of cavity on the fundamental mode operation is studied. In a long cavity, guided mode can be supported by using higher implantation energy, however, a larger mask diameter should be used to maintain strong guiding. Result shows that optical lateral confinement is accomplished, with more than 70% of the power gathered in the cavity. The fraction of power confined in the waveguide is shown to improve by 30% after annealing. In addition, waveguide loss is estimated to be less than 40 cm-1 which results in less than 1 dB for our structure.en_HK
dc.format.extent448643 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=50en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleWaveguiding in vertical cavity quantum-well structure defined by ion implantationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0733-8724&volume=16&issue=8&spage=1498&epage=1508&date=1998&atitle=Waveguiding+in+vertical+cavity+quantum-well+structure+defined+by+ion+implantationen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/50.704616en_HK
dc.identifier.scopuseid_2-s2.0-0032136078-
dc.identifier.hkuros45622-
dc.identifier.isiWOS:000075105200015-

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