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Article: Interdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulation

TitleInterdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulation
Authors
KeywordsDiffusion process
Electroabsorption
Intermixing quantum well
Modeling
Optical materials/devices
Quantum-well devices
Quantumconfined Stark effect
Tunable devices
Issue Date1998
PublisherIEEE.
Citation
Ieee Journal Of Quantum Electronics, 1998, v. 34 n. 7, p. 1162-1170 How to Cite?
AbstractThis is a theoretical study of the effects of two asgrown structural parameters on the modulation properties of Al xGa 1-xAs-GaAs quantum wells (QW's), which are the Al concentration in barrier and the thickness of the well layer serving as initial conditions before interdiffusion. The results show that, with a larger Al concentration and a wider well width, the range of interdiffusion for an enhanced electroabsorption (EA) change increases with both of these parameters, while insertion loss increases with the former and decreases with the latter. However, the increase in loss is lower than that of the rectangular QW for the same magnitude of absorption change. The range of a tunable absorption-peak wavelength produced by interdiffussion increases with increasing Al concentration and decreases with increasing well width. Moreover, in a moderately interdiffused QW, the required bias reduces for the same level of EA modulation. For the best device operation, interdiffused QW's with the Al concentration between 0.3 and 0.4 and well width between 10 and 12 nm are must suitable for developing a general-purpose electroabsorptive modulator. When applied in high-speed modulators, the EA of a wide and shallow QW active-region structure can be further enhanced by the use of corresponding interdiffusion.
Persistent Identifierhttp://hdl.handle.net/10722/42812
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:39Z-
dc.date.available2007-03-23T04:32:39Z-
dc.date.issued1998en_HK
dc.identifier.citationIeee Journal Of Quantum Electronics, 1998, v. 34 n. 7, p. 1162-1170en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42812-
dc.description.abstractThis is a theoretical study of the effects of two asgrown structural parameters on the modulation properties of Al xGa 1-xAs-GaAs quantum wells (QW's), which are the Al concentration in barrier and the thickness of the well layer serving as initial conditions before interdiffusion. The results show that, with a larger Al concentration and a wider well width, the range of interdiffusion for an enhanced electroabsorption (EA) change increases with both of these parameters, while insertion loss increases with the former and decreases with the latter. However, the increase in loss is lower than that of the rectangular QW for the same magnitude of absorption change. The range of a tunable absorption-peak wavelength produced by interdiffussion increases with increasing Al concentration and decreases with increasing well width. Moreover, in a moderately interdiffused QW, the required bias reduces for the same level of EA modulation. For the best device operation, interdiffused QW's with the Al concentration between 0.3 and 0.4 and well width between 10 and 12 nm are must suitable for developing a general-purpose electroabsorptive modulator. When applied in high-speed modulators, the EA of a wide and shallow QW active-region structure can be further enhanced by the use of corresponding interdiffusion.en_HK
dc.format.extent201136 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectDiffusion processen_HK
dc.subjectElectroabsorptionen_HK
dc.subjectIntermixing quantum wellen_HK
dc.subjectModelingen_HK
dc.subjectOptical materials/devicesen_HK
dc.subjectQuantum-well devicesen_HK
dc.subjectQuantumconfined Stark effecten_HK
dc.subjectTunable devicesen_HK
dc.titleInterdiffused AlGaAs-GaAs quantum well for improved electroabsorptive modulationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=34&issue=7&spage=1162&epage=1170&date=1998&atitle=Interdiffused+AlGaAs-GaAs+quantum+well+for+improved+electroabsorptive+modulationen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.687859en_HK
dc.identifier.scopuseid_2-s2.0-0032123824en_HK
dc.identifier.hkuros45384-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032123824&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume34en_HK
dc.identifier.issue7en_HK
dc.identifier.spage1162en_HK
dc.identifier.epage1170en_HK
dc.identifier.isiWOS:000074192300015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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