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Article: Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors

TitleIntermixing in strained InGaAs/GaAs quantum-well infrared photodetectors
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1999, v. 74 n. 8, p. 1102-1104 How to Cite?
AbstractThe effect of interdiffusion on strained InGaAs/GaAs quantum-well infrared photodetectors is investigated. Photoluminescence measurements of the interband transition indicate that there is minimal deterioration of the annealed heterostructures, as it is also evident from both the transverse electric and transverse magnetic infrared intersubband optical transitions. The absorption peak wavelength is redshifted from the as-grown 10.2 µm to 10.5 and 11.2 µm for 5 and 10 s annealing, respectively, at 850 °C without appreciable degradation in absorption strength. The peak responsivity of the as-grown and annealed spectra is of comparable amplitude, whereas the annealed spectra become narrower in shape. The dark current of the annealed devices is about an order of magnitude higher than the as-grown one at 77 K. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42809
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLee, ASWen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorKarunasiri, Gen_HK
dc.date.accessioned2007-03-23T04:32:36Z-
dc.date.available2007-03-23T04:32:36Z-
dc.date.issued1999en_HK
dc.identifier.citationApplied Physics Letters, 1999, v. 74 n. 8, p. 1102-1104en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42809-
dc.description.abstractThe effect of interdiffusion on strained InGaAs/GaAs quantum-well infrared photodetectors is investigated. Photoluminescence measurements of the interband transition indicate that there is minimal deterioration of the annealed heterostructures, as it is also evident from both the transverse electric and transverse magnetic infrared intersubband optical transitions. The absorption peak wavelength is redshifted from the as-grown 10.2 µm to 10.5 and 11.2 µm for 5 and 10 s annealing, respectively, at 850 °C without appreciable degradation in absorption strength. The peak responsivity of the as-grown and annealed spectra is of comparable amplitude, whereas the annealed spectra become narrower in shape. The dark current of the annealed devices is about an order of magnitude higher than the as-grown one at 77 K. ©1999 American Institute of Physics.en_HK
dc.format.extent73175 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleIntermixing in strained InGaAs/GaAs quantum-well infrared photodetectorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=74&issue=8&spage=1102&epage=1104&date=1999&atitle=Intermixing+in+strained+InGaAs/GaAs+quantum-well+infrared+photodetectorsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.123456en_HK
dc.identifier.scopuseid_2-s2.0-0033593718-
dc.identifier.hkuros45271-
dc.identifier.isiWOS:000078685700016-

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