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Article: Interdiffusion-induced polarization-independent optical gain of an InGaAs-InP quantum-well with carrier effects

TitleInterdiffusion-induced polarization-independent optical gain of an InGaAs-InP quantum-well with carrier effects
Authors
Issue Date1999
PublisherIEEE.
Citation
Ieee Journal Of Quantum Electronics, 1999, v. 35 n. 6, p. 913-921 How to Cite?
AbstractA theoretical study of the polarization-independent optical gain using group V sublattice interdiffusion in InGaAs-InP quantum wells (QW's) is presented here. The reverse bias and carrier effects on the subband structures, transition energy, and optical gain of the interdiffused QW are discussed. The interdiffused QW structures are optimized in terms of their subband structure, carrier density, structural parameters, and properties of optical gain spectra. The results show that an optimized interdiffused QW structure can produce polarization-independent optical gain over a range of operation wavelengths around 1.5 μm, although the differential gain and linewidth enhancement factor are slightly degraded. The required tensile strain for the polarization-independent optical properties of a lattice-matched QW structure may be generated using interdiffusion. These results suggest that polarization-independent optical devices can be fabricated using interdiffusion in a lattice-matched InGaAsP QW structure.
Persistent Identifierhttp://hdl.handle.net/10722/42808
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorWeiss, BLen_HK
dc.date.accessioned2007-03-23T04:32:35Z-
dc.date.available2007-03-23T04:32:35Z-
dc.date.issued1999en_HK
dc.identifier.citationIeee Journal Of Quantum Electronics, 1999, v. 35 n. 6, p. 913-921en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42808-
dc.description.abstractA theoretical study of the polarization-independent optical gain using group V sublattice interdiffusion in InGaAs-InP quantum wells (QW's) is presented here. The reverse bias and carrier effects on the subband structures, transition energy, and optical gain of the interdiffused QW are discussed. The interdiffused QW structures are optimized in terms of their subband structure, carrier density, structural parameters, and properties of optical gain spectra. The results show that an optimized interdiffused QW structure can produce polarization-independent optical gain over a range of operation wavelengths around 1.5 μm, although the differential gain and linewidth enhancement factor are slightly degraded. The required tensile strain for the polarization-independent optical properties of a lattice-matched QW structure may be generated using interdiffusion. These results suggest that polarization-independent optical devices can be fabricated using interdiffusion in a lattice-matched InGaAsP QW structure.en_HK
dc.format.extent230712 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleInterdiffusion-induced polarization-independent optical gain of an InGaAs-InP quantum-well with carrier effectsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=35&issue=6&spage=913&epage=921&date=1999&atitle=Interdiffusion+induced+polarization-independent+optical+gain+of+an+InGaAs-InP+quantum-well+with+carrier+effectsen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.766834en_HK
dc.identifier.scopuseid_2-s2.0-0032634816en_HK
dc.identifier.hkuros45243-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032634816&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume35en_HK
dc.identifier.issue6en_HK
dc.identifier.spage913en_HK
dc.identifier.epage921en_HK
dc.identifier.isiWOS:000080581700007-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK
dc.identifier.scopusauthoridChan, MCY=7402597965en_HK
dc.identifier.scopusauthoridWeiss, BL=7402309717en_HK

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