File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/55.753749
- Scopus: eid_2-s2.0-0032630057
- WOS: WOS:000079444700001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment
Title | Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment |
---|---|
Authors | |
Issue Date | 1999 |
Publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | Ieee Electron Device Letters, 1999, v. 20 n. 4, p. 149-151 How to Cite? |
Abstract | The 1/f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1/f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment. |
Persistent Identifier | http://hdl.handle.net/10722/42806 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Xu, JP | en_HK |
dc.contributor.author | Cheng, YC | en_HK |
dc.date.accessioned | 2007-03-23T04:32:33Z | - |
dc.date.available | 2007-03-23T04:32:33Z | - |
dc.date.issued | 1999 | en_HK |
dc.identifier.citation | Ieee Electron Device Letters, 1999, v. 20 n. 4, p. 149-151 | en_HK |
dc.identifier.issn | 0741-3106 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42806 | - |
dc.description.abstract | The 1/f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1/f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment. | en_HK |
dc.format.extent | 70588 bytes | - |
dc.format.extent | 27648 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | en_HK |
dc.relation.ispartof | IEEE Electron Device Letters | en_HK |
dc.rights | ©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.title | Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=20&issue=4&spage=149&epage=151&date=1999&atitle=Improvement+on+1/f+noise+properties+of+nitrided+n-MOSFETs+by+backsurface+argon+bombardment | en_HK |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_HK |
dc.identifier.email | Xu, JP: jpxu@eee.hku.hk | en_HK |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.identifier.authority | Xu, JP=rp00197 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/55.753749 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0032630057 | en_HK |
dc.identifier.hkuros | 44790 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0032630057&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 20 | en_HK |
dc.identifier.issue | 4 | en_HK |
dc.identifier.spage | 149 | en_HK |
dc.identifier.epage | 151 | en_HK |
dc.identifier.isi | WOS:000079444700001 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.scopusauthorid | Xu, JP=7407004696 | en_HK |
dc.identifier.scopusauthorid | Cheng, YC=27167728600 | en_HK |
dc.identifier.issnl | 0741-3106 | - |