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Article: Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment

TitleImprovement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardment
Authors
Issue Date1999
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1999, v. 20 n. 4, p. 149-151 How to Cite?
AbstractThe 1/f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1/f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment.
Persistent Identifierhttp://hdl.handle.net/10722/42806
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-03-23T04:32:33Z-
dc.date.available2007-03-23T04:32:33Z-
dc.date.issued1999en_HK
dc.identifier.citationIeee Electron Device Letters, 1999, v. 20 n. 4, p. 149-151en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42806-
dc.description.abstractThe 1/f noise properties of nitrided n-MOSFET's bombarded by low-energy (550 eV) argon-ion beam are investigated. It is found that after bombardment, 1/f noise, and its degradation under hot-carrier stress are reduced, and both exhibit a turnaround behavior with bombardment time for a given ion energy and intensity. The physical mechanism involved is probably enhanced interface hardness resulting from bombardment-induced stress relief in the vicinity of the oxide/Si interface. Moreover, from the frequency dependence of the noise, it is revealed that the nitrided devices have a nonuniform trap distribution increasing toward the oxide/Si interface which can be modified by the backsurface bombardment.en_HK
dc.format.extent70588 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleImprovement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=20&issue=4&spage=149&epage=151&date=1999&atitle=Improvement+on+1/f+noise+properties+of+nitrided+n-MOSFETs+by+backsurface+argon+bombardmenten_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.753749en_HK
dc.identifier.scopuseid_2-s2.0-0032630057en_HK
dc.identifier.hkuros44790-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032630057&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue4en_HK
dc.identifier.spage149en_HK
dc.identifier.epage151en_HK
dc.identifier.isiWOS:000079444700001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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