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Article: Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers

TitleComprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers
Authors
Issue Date1998
PublisherIEEE.
Citation
IEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 715-722 How to Cite?
AbstractA numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surface-emitting: lasers (VCSELs) with a diffused quantum-well (QW) structure is presented. In the model, the quasi-three-dimensional (quasi-3-D) distribution of temperature, voltage and optical fields as well as the quasi-two-dimensional (quasi-2-D) diffusion and recombination of carrier concentration inside the QW active layer are calculated in a self-consistent manner. In addition, the quasi-3-D distribution of implanted ions before and after thermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced compositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration. Using this model, the steady-state characteristics of diffused QW VCSELs are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused QW structure.
Persistent Identifierhttp://hdl.handle.net/10722/42798
ISSN
2015 Impact Factor: 3.466
2015 SCImago Journal Rankings: 1.632
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMan, WMen_HK
dc.contributor.authorYu, SFen_HK
dc.date.accessioned2007-03-23T04:32:25Z-
dc.date.available2007-03-23T04:32:25Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 715-722en_HK
dc.identifier.issn1077-260Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/42798-
dc.description.abstractA numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surface-emitting: lasers (VCSELs) with a diffused quantum-well (QW) structure is presented. In the model, the quasi-three-dimensional (quasi-3-D) distribution of temperature, voltage and optical fields as well as the quasi-two-dimensional (quasi-2-D) diffusion and recombination of carrier concentration inside the QW active layer are calculated in a self-consistent manner. In addition, the quasi-3-D distribution of implanted ions before and after thermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced compositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration. Using this model, the steady-state characteristics of diffused QW VCSELs are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused QW structure.en_HK
dc.format.extent235299 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleComprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1077-260X&volume=4&issue=4&spage=715&epage=722&date=1998&atitle=Comprehensive+modeling+of+diffused+quantum-well+vertical-cavity+surface-emitting+lasersen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/2944.720484en_HK
dc.identifier.scopuseid_2-s2.0-0032120204-
dc.identifier.hkuros44657-
dc.identifier.isiWOS:000076177400018-

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