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Article: Semiconductor lasers using diffused quantum-well structures

TitleSemiconductor lasers using diffused quantum-well structures
Authors
Yu, SFLi, EH
KeywordsQuantum wells
Quantum-well intermixing
Semiconductor lasers
Issue Date1998
PublisherIEEE.
Citation
IEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 723-735 How to Cite?
DOI: http://dx.doi.org/10.1109/2944.720485
AbstractWe assess the relative merits and prospects of using diffused quantum-well (QW) structures in semiconductor lasers. First, different techniques to achieve interdiffusion are analyzed and compared. Second, recent development of semiconductor lasers using interdiffusion technique is also discussed. Third, the optical properties of diffused QWs are studied. In addition, novel design of diffused QWs structures to maintain stable single-mode operation in semiconductor lasers is proposed. Finally, brief discussion and conclusion are given.
Persistent Identifierhttp://hdl.handle.net/10722/42795
ISSN
1077-260X
2023 Impact Factor: 4.3
2023 SCImago Journal Rankings: 1.283
ISI Accession Number ID
WOS:000076177400019

 

DC FieldValueLanguage
dc.contributor.authorYu, SFen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:22Z-
dc.date.available2007-03-23T04:32:22Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Journal on Selected Topics in Quantum Electronics, 1998, v. 4 n. 4, p. 723-735en_HK
dc.identifier.issn1077-260Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/42795-
dc.description.abstractWe assess the relative merits and prospects of using diffused quantum-well (QW) structures in semiconductor lasers. First, different techniques to achieve interdiffusion are analyzed and compared. Second, recent development of semiconductor lasers using interdiffusion technique is also discussed. Third, the optical properties of diffused QWs are studied. In addition, novel design of diffused QWs structures to maintain stable single-mode operation in semiconductor lasers is proposed. Finally, brief discussion and conclusion are given.en_HK
dc.format.extent294140 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Selected Topics in Quantum Electronics-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectQuantum wells-
dc.subjectQuantum-well intermixing-
dc.subjectSemiconductor lasers-
dc.titleSemiconductor lasers using diffused quantum-well structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1077-260X&volume=4&issue=4&spage=723&epage=735&date=1998&atitle=Semiconductor+lasers+using+diffused+quantum-well+structuresen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/2944.720485en_HK
dc.identifier.scopuseid_2-s2.0-0032119766-
dc.identifier.hkuros44631-
dc.identifier.isiWOS:000076177400019-
dc.identifier.issnl1077-260X-

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