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Article: Special modulator for high frequency, low-voltage plasma immersion ion implantation

TitleSpecial modulator for high frequency, low-voltage plasma immersion ion implantation
Authors
KeywordsInstruments
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/
Citation
Review of Scientific Instruments, 1999, v. 70 n. 3, p. 1824-1828 How to Cite?
AbstractPlasma immersion ion implantation is a burgeoning surface modification technique and not limited by the line-of-sight restriction plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as well as components of a complex shape. To enhance the implant uniformity and increase the thickness of the modified layer, we are using a high frequency, low-voltage process to achieve high temperature and dose rate to increase the thickness of the modified layer. The low voltage conditions also lead to a thinner sheath more favorable to conformal implantation. In this article, we will describe our special modulator consisting of a single ended forward converter with a step-up transformer. The modulator is designed to operate from 5 to 35 kHz and the output voltage is adjustable to an upper ceiling of 5000 V that is deliberately chosen to be our voltage limit for the present experiments. We will also present experimental data on SS304 stainless steel materials elucidating the advantages of our modulator and high frequency, low-voltage experimental protocols. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42788
ISSN
2015 Impact Factor: 1.336
2015 SCImago Journal Rankings: 0.571
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTian, Xen_HK
dc.contributor.authorWang, Xen_HK
dc.contributor.authorTang, Ben_HK
dc.contributor.authorChu, PKen_HK
dc.contributor.authorKo, PKen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-03-23T04:32:12Z-
dc.date.available2007-03-23T04:32:12Z-
dc.date.issued1999en_HK
dc.identifier.citationReview of Scientific Instruments, 1999, v. 70 n. 3, p. 1824-1828en_HK
dc.identifier.issn0034-6748en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42788-
dc.description.abstractPlasma immersion ion implantation is a burgeoning surface modification technique and not limited by the line-of-sight restriction plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as well as components of a complex shape. To enhance the implant uniformity and increase the thickness of the modified layer, we are using a high frequency, low-voltage process to achieve high temperature and dose rate to increase the thickness of the modified layer. The low voltage conditions also lead to a thinner sheath more favorable to conformal implantation. In this article, we will describe our special modulator consisting of a single ended forward converter with a step-up transformer. The modulator is designed to operate from 5 to 35 kHz and the output voltage is adjustable to an upper ceiling of 5000 V that is deliberately chosen to be our voltage limit for the present experiments. We will also present experimental data on SS304 stainless steel materials elucidating the advantages of our modulator and high frequency, low-voltage experimental protocols. ©1999 American Institute of Physics.en_HK
dc.format.extent81296 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectInstrumentsen_HK
dc.titleSpecial modulator for high frequency, low-voltage plasma immersion ion implantationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0034-6748&volume=70&issue=3&spage=1824&epage=1828&date=1999&atitle=Special+modulator+for+high+frequency,+low-voltage+plasma+immersion+ion+implantationen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1149675en_HK
dc.identifier.hkuros40693-
dc.identifier.isiWOS:000079012100041-

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