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Article: Optical properties of an InGaAs-InP interdiffused quantum well

TitleOptical properties of an InGaAs-InP interdiffused quantum well
Authors
KeywordsBirefringence
Dielectric constants
Optical refraction
Quantum-well interdiffusion
Quantum-well intermixing
Issue Date1998
PublisherIEEE.
Citation
IEEE Journal of Quantum Electronics, 1998, v. 34 n. 6, p. 982-990 How to Cite?
AbstractA comprehensive model is developed for the calculation of polarization-dependent absorption coefficients and refractive index of the InGaAs-InP interdiffused multiple-quantum-well at room temperature for wavelengths ranging from 1.1 to 2.4 μm. Groups III and V types of interdiffusion are considered separately. The as-grown structure is a latticed-matched In0.53Ga0.47As-InP structure with a well width of 60 Å. The optical transitions consist of a full quantum-well calculation together with Γ,X, and L valleys contributions and through the Kramers-Kronig transformation to link the real and imaginary parts of the dielectric functions. The results show that group-III-only interdiffusion produces compressive strain and results in a band-edge red shift and refractive index enlargement, while the tensile strain induced by group-V-only interdiffusion results in a vice verse effect. This provides a left and right tunable band edge and positive and negative index steps dependent on the interdiffusion process. A small and constant birefringence of 0.005 at around 1.55 μm can also be obtained over a 50-nm wavelength range by using group-V-only interdiffusion. These properties have strong implications in realizing a tunable and high-performance device as well as for photonic integrations.
Persistent Identifierhttp://hdl.handle.net/10722/42787
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:11Z-
dc.date.available2007-03-23T04:32:11Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Journal of Quantum Electronics, 1998, v. 34 n. 6, p. 982-990en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42787-
dc.description.abstractA comprehensive model is developed for the calculation of polarization-dependent absorption coefficients and refractive index of the InGaAs-InP interdiffused multiple-quantum-well at room temperature for wavelengths ranging from 1.1 to 2.4 μm. Groups III and V types of interdiffusion are considered separately. The as-grown structure is a latticed-matched In0.53Ga0.47As-InP structure with a well width of 60 Å. The optical transitions consist of a full quantum-well calculation together with Γ,X, and L valleys contributions and through the Kramers-Kronig transformation to link the real and imaginary parts of the dielectric functions. The results show that group-III-only interdiffusion produces compressive strain and results in a band-edge red shift and refractive index enlargement, while the tensile strain induced by group-V-only interdiffusion results in a vice verse effect. This provides a left and right tunable band edge and positive and negative index steps dependent on the interdiffusion process. A small and constant birefringence of 0.005 at around 1.55 μm can also be obtained over a 50-nm wavelength range by using group-V-only interdiffusion. These properties have strong implications in realizing a tunable and high-performance device as well as for photonic integrations.en_HK
dc.format.extent246306 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectBirefringenceen_HK
dc.subjectDielectric constantsen_HK
dc.subjectOptical refractionen_HK
dc.subjectQuantum-well interdiffusionen_HK
dc.subjectQuantum-well intermixingen_HK
dc.titleOptical properties of an InGaAs-InP interdiffused quantum wellen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=34&issue=6&spage=982&epage=990&date=1998&atitle=Optical+properties+of+an+InGaAs-InP+interdiffused+quantum+wellen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.678594en_HK
dc.identifier.scopuseid_2-s2.0-0032094949-
dc.identifier.hkuros38039-
dc.identifier.isiWOS:000073727300007-

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