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Article: A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes

TitleA comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 72 n. 13, p. 1629-1631 How to Cite?
AbstractWe report on the effects of uniaxial pressure on (001)-oriented AlGaAs/GaAs and InAs/AlSb/GaSb double barrier resonant tunneling diodes (RTDs). The current–voltage characteristics of the AlGaAs/GaAs RTDs shift asymmetrically due to stress-induced piezoelectric fields in the barriers and well structures. Although all the materials involved are piezoelectric, the interband InAs/AlSb/GaSb resonant tunneling device surprisingly shows, in contrast to the AlGaAs/GaAs one, a symmetrical behavior for the same orientation [110] of the applied pressure. We explain the observed differences considering the different tunneling paths involved in the conduction mechanism of the two heterostructure device types as well as their pressure dependencies. ©1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42785
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMutamba, Ken_HK
dc.contributor.authorSigurdardottir, Aen_HK
dc.contributor.authorVogt, Aen_HK
dc.contributor.authorHartnagel, HLen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:09Z-
dc.date.available2007-03-23T04:32:09Z-
dc.date.issued1998en_HK
dc.identifier.citationApplied Physics Letters, 1998, v. 72 n. 13, p. 1629-1631en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42785-
dc.description.abstractWe report on the effects of uniaxial pressure on (001)-oriented AlGaAs/GaAs and InAs/AlSb/GaSb double barrier resonant tunneling diodes (RTDs). The current–voltage characteristics of the AlGaAs/GaAs RTDs shift asymmetrically due to stress-induced piezoelectric fields in the barriers and well structures. Although all the materials involved are piezoelectric, the interband InAs/AlSb/GaSb resonant tunneling device surprisingly shows, in contrast to the AlGaAs/GaAs one, a symmetrical behavior for the same orientation [110] of the applied pressure. We explain the observed differences considering the different tunneling paths involved in the conduction mechanism of the two heterostructure device types as well as their pressure dependencies. ©1998 American Institute of Physics.en_HK
dc.format.extent448800 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleA comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=72&issue=13&spage=1629&epage=1631&date=1998&atitle=A+comparative+study+of+uniaxial+pressure+effects+in+intraband+AlGaAs/GaAs+and+interband+InAs/AlSb/GaSb+resonant+tunneling+diodesen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.121135en_HK
dc.identifier.scopuseid_2-s2.0-0012544608-
dc.identifier.hkuros38028-
dc.identifier.isiWOS:000072760100036-

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