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Article: Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

TitleModeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing
Authors
KeywordsDiffusion process
Inalgaas
Optical gain
Quantum-well interdiffusion
Quantum-well intermixing
Issue Date1998
PublisherIEEE.
Citation
IEEE Journal of Quantum Electronics, 1998, v. 34 n. 3, p. 519-525 How to Cite?
AbstractMultiple cations intermixing in an In0.53Ga0.47 As-In0.52Al0.48As quantum-well (QW) structure with 60-Å well width is being studied based on the expanded form of Fick's second law. Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812°C. For a small interdiffusion, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance. For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV (λ=1.47 μm) to 1.016 eV (λ=1.22 μm) is obtained, thus giving a high tunability of the lasing wavelength.
Persistent Identifierhttp://hdl.handle.net/10722/42784
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorChan, Yen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:07Z-
dc.date.available2007-03-23T04:32:07Z-
dc.date.issued1998en_HK
dc.identifier.citationIEEE Journal of Quantum Electronics, 1998, v. 34 n. 3, p. 519-525en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42784-
dc.description.abstractMultiple cations intermixing in an In0.53Ga0.47 As-In0.52Al0.48As quantum-well (QW) structure with 60-Å well width is being studied based on the expanded form of Fick's second law. Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812°C. For a small interdiffusion, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance. For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV (λ=1.47 μm) to 1.016 eV (λ=1.22 μm) is obtained, thus giving a high tunability of the lasing wavelength.en_HK
dc.format.extent161320 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectDiffusion processen_HK
dc.subjectInalgaasen_HK
dc.subjectOptical gainen_HK
dc.subjectQuantum-well interdiffusionen_HK
dc.subjectQuantum-well intermixingen_HK
dc.titleModeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixingen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=34&issue=3&spage=519&epage=525&date=1998&atitle=Modeling+of+optical+gain+properties+of+multiple+cations+InGaAs-InAlAs+quantum-well+intermixingen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.661461en_HK
dc.identifier.scopuseid_2-s2.0-0032023435-
dc.identifier.hkuros38025-
dc.identifier.isiWOS:000072247200018-

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