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Article: The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures

TitleThe effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 72 n. 3, p. 338-340 How to Cite?
AbstractThe effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42782
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorHughes, PJen_HK
dc.contributor.authorWeiss, BLen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorHong, Ken_HK
dc.contributor.authorPavlidis, Den_HK
dc.date.accessioned2007-03-23T04:32:05Z-
dc.date.available2007-03-23T04:32:05Z-
dc.date.issued1998en_HK
dc.identifier.citationApplied Physics Letters, 1998, v. 72 n. 3, p. 338-340en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42782-
dc.description.abstractThe effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. © 1998 American Institute of Physics.en_HK
dc.format.extent71670 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleThe effect of growth interruption on the properties of InGaAs/InAlAs quantum well structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=72&issue=3&spage=338&epage=340&date=1998&atitle=The+effect+of+growth+interruption+on+the+properties+of+InGaAs/InAlAs+quantum+well+structuresen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.120729en_HK
dc.identifier.scopuseid_2-s2.0-0031676734en_HK
dc.identifier.hkuros38022-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031676734&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume72en_HK
dc.identifier.issue3en_HK
dc.identifier.spage338en_HK
dc.identifier.epage340en_HK
dc.identifier.isiWOS:000071558100024-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridHughes, PJ=36347155300en_HK
dc.identifier.scopusauthoridWeiss, BL=7402309717en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK
dc.identifier.scopusauthoridHong, K=7402515563en_HK
dc.identifier.scopusauthoridPavlidis, D=7004537136en_HK

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