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Article: AlGaAs-GaAs quantum-well electrooptic phase modulator with disorder delineated optical confinement

TitleAlGaAs-GaAs quantum-well electrooptic phase modulator with disorder delineated optical confinement
Authors
KeywordsElectrooptic materials/devices
Electrooptic modulation
Optical losses
Optical planar waveguides
Quantum wells
Semiconductor waveguides
Issue Date1998
PublisherIEEE.
Citation
Ieee Journal Of Quantum Electronics, 1998, v. 34 n. 1, p. 84-92 How to Cite?
AbstractWaveguide phase modulators, with 0.5- and 1-μm quantum-well (QW) active regions which are defined by impurity-induced disordering are investigated theoretically. By controlling the extent of the interdiffusion in the lateral claddings, the refractive index difference between the core and claddings is used to provide single-mode operation. Strong optical confinement, which is required to produce single-mode high-efficiency modulation, requires the peak impurity concentration to be at the center of the QW active region. Moreover, the annealing time needs to be optimized so that single mode can be maintained at the desired bias field. A low dopant concentration is also expected to minimize the destruction of the modulator structure. The results show that since the core/cladding interface is graded, the width of the metal contact is important. A comparison of modulation efficiency for active layer thicknesses of 0.5 and 1.0 μm shows that the 0.5-μm one is a more efficient structure and its absorption loss can be reduced by increasing the applied field from 50 to 100 kV/cm.
Persistent Identifierhttp://hdl.handle.net/10722/42780
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorWeiss, BLen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:03Z-
dc.date.available2007-03-23T04:32:03Z-
dc.date.issued1998en_HK
dc.identifier.citationIeee Journal Of Quantum Electronics, 1998, v. 34 n. 1, p. 84-92en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42780-
dc.description.abstractWaveguide phase modulators, with 0.5- and 1-μm quantum-well (QW) active regions which are defined by impurity-induced disordering are investigated theoretically. By controlling the extent of the interdiffusion in the lateral claddings, the refractive index difference between the core and claddings is used to provide single-mode operation. Strong optical confinement, which is required to produce single-mode high-efficiency modulation, requires the peak impurity concentration to be at the center of the QW active region. Moreover, the annealing time needs to be optimized so that single mode can be maintained at the desired bias field. A low dopant concentration is also expected to minimize the destruction of the modulator structure. The results show that since the core/cladding interface is graded, the width of the metal contact is important. A comparison of modulation efficiency for active layer thicknesses of 0.5 and 1.0 μm shows that the 0.5-μm one is a more efficient structure and its absorption loss can be reduced by increasing the applied field from 50 to 100 kV/cm.en_HK
dc.format.extent175845 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_HK
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectElectrooptic materials/devicesen_HK
dc.subjectElectrooptic modulationen_HK
dc.subjectOptical lossesen_HK
dc.subjectOptical planar waveguidesen_HK
dc.subjectQuantum wellsen_HK
dc.subjectSemiconductor waveguidesen_HK
dc.titleAlGaAs-GaAs quantum-well electrooptic phase modulator with disorder delineated optical confinementen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=34&issue=1&spage=84&epage=92&date=1998&atitle=AlGaAs-GaAs+quantum-well+electrooptic+phase+modulator+with+disorder+delineated+optical+confinementen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.655011en_HK
dc.identifier.scopuseid_2-s2.0-0031674705en_HK
dc.identifier.hkuros38020-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031674705&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume34en_HK
dc.identifier.issue1en_HK
dc.identifier.spage84en_HK
dc.identifier.epage92en_HK
dc.identifier.isiWOS:000071236600012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridWeiss, BL=7402309717en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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