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Article: Electro-optic and electro-absorptive modulations of AlGaAs/GaAs quantum well using surface acoustic wave

TitleElectro-optic and electro-absorptive modulations of AlGaAs/GaAs quantum well using surface acoustic wave
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1998, v. 83 n. 2, p. 858-866 How to Cite?
AbstractThe surface acoustic wave produced electron absorptive and electro-optic modulation in AlGaAs/ GaAs quantum well structures are theoretically analyzed. The quantum well structures are optimized by maximizing the optical confinement of the modal field in the active region and the piezoelectric effect of surface acoustic wave on the quantum wells. The effect of penetration depth of the surface acoustic wave on the number (1-25 periods) of quantum wells, serving as the active region, is being studied. For 1-5 period structures, the quantum wells are designed on the top surface so that a strong piezoelectric effect can be obtained. For the 25-period structure, the quantum wells locate at a depth of two-thirds the acoustic-wave wavelength in order to obtain a uniform surface acoustic-wave-induced electric field. The results show that the single and five quantum well devices are suitable for absorptive modulation and optical modulation, respectively, while a general advantage of the 25-period quantum well modulator can shorten the modulation interaction length and increase the modulation bandwidth. The effective index change of these devices are at least ten times larger than the conventional surface acoustic wave devices. These results make the surface acoustic wave quantum well modulators more attractive for the development of acousto-optic device applications. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42779
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorWeiss, BLen_HK
dc.date.accessioned2007-03-23T04:32:02Z-
dc.date.available2007-03-23T04:32:02Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal Of Applied Physics, 1998, v. 83 n. 2, p. 858-866en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42779-
dc.description.abstractThe surface acoustic wave produced electron absorptive and electro-optic modulation in AlGaAs/ GaAs quantum well structures are theoretically analyzed. The quantum well structures are optimized by maximizing the optical confinement of the modal field in the active region and the piezoelectric effect of surface acoustic wave on the quantum wells. The effect of penetration depth of the surface acoustic wave on the number (1-25 periods) of quantum wells, serving as the active region, is being studied. For 1-5 period structures, the quantum wells are designed on the top surface so that a strong piezoelectric effect can be obtained. For the 25-period structure, the quantum wells locate at a depth of two-thirds the acoustic-wave wavelength in order to obtain a uniform surface acoustic-wave-induced electric field. The results show that the single and five quantum well devices are suitable for absorptive modulation and optical modulation, respectively, while a general advantage of the 25-period quantum well modulator can shorten the modulation interaction length and increase the modulation bandwidth. The effective index change of these devices are at least ten times larger than the conventional surface acoustic wave devices. These results make the surface acoustic wave quantum well modulators more attractive for the development of acousto-optic device applications. © 1998 American Institute of Physics.en_HK
dc.format.extent171364 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleElectro-optic and electro-absorptive modulations of AlGaAs/GaAs quantum well using surface acoustic waveen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=83&issue=2&spage=858&epage=866&date=1998&atitle=Electro-optic+and+electro-absorptive+modulations+of+AlGaAs/GaAs+quantum+well+using+surface+acoustic+waveen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.366768en_HK
dc.identifier.scopuseid_2-s2.0-11344294523en_HK
dc.identifier.hkuros37956-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-11344294523&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume83en_HK
dc.identifier.issue2en_HK
dc.identifier.spage858en_HK
dc.identifier.epage866en_HK
dc.identifier.isiWOS:000071509000035-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK
dc.identifier.scopusauthoridWeiss, BL=7402309717en_HK

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