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Article: Electro-absorptive properties of interdiffused InGaAsP/InP quantum wells

TitleElectro-absorptive properties of interdiffused InGaAsP/InP quantum wells
Authors
KeywordsPhysics engineering
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1997, v. 82 n. 8, p. 3861-3869 How to Cite?
AbstractThe effects of Group III and Group V interdiffusions with a varied as-grown well width and P concentration in the quaternary InGaAsP quantum well material have been theoretically studied. Interesting features of multiple mini-well profiles, generated by interdiffusion induced compressive and tensile strains, have been obtained and varying envelope overlapping of the electron-hole wave functions has been observed. The results show that the interdiffusion of the Group III elements with a well width of 10 nm offers a wide adjustability of the operation wavelength, enhances Stark shift, and reduces absorption loss, although they bear the shortcomings of low electro-absorption and contrast ratio. Several methods are proposed here to recover the contrast ratio with a maximum improvement of 66%. For the Group V interdiffusion of a 10-nm-wide as-grown well, a low absorption loss and a large Stark shift will result, while that of a narrowed well can widen the band-edge wavelength adjustability with a large electro-absorption. These results are important for the development of electro-absorptive InGaAsP/InP diffused quantum well modulators. © 1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42762
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, EHen_HK
dc.contributor.authorChoy, WCHen_HK
dc.date.accessioned2007-03-23T04:31:41Z-
dc.date.available2007-03-23T04:31:41Z-
dc.date.issued1997en_HK
dc.identifier.citationJournal of Applied Physics, 1997, v. 82 n. 8, p. 3861-3869-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42762-
dc.description.abstractThe effects of Group III and Group V interdiffusions with a varied as-grown well width and P concentration in the quaternary InGaAsP quantum well material have been theoretically studied. Interesting features of multiple mini-well profiles, generated by interdiffusion induced compressive and tensile strains, have been obtained and varying envelope overlapping of the electron-hole wave functions has been observed. The results show that the interdiffusion of the Group III elements with a well width of 10 nm offers a wide adjustability of the operation wavelength, enhances Stark shift, and reduces absorption loss, although they bear the shortcomings of low electro-absorption and contrast ratio. Several methods are proposed here to recover the contrast ratio with a maximum improvement of 66%. For the Group V interdiffusion of a 10-nm-wide as-grown well, a low absorption loss and a large Stark shift will result, while that of a narrowed well can widen the band-edge wavelength adjustability with a large electro-absorption. These results are important for the development of electro-absorptive InGaAsP/InP diffused quantum well modulators. © 1997 American Institute of Physics.en_HK
dc.format.extent222049 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1997, v. 82 n. 8, p. 3861-3869 and may be found at https://doi.org/10.1063/1.365752-
dc.subjectPhysics engineeringen_HK
dc.titleElectro-absorptive properties of interdiffused InGaAsP/InP quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=82&issue=8&spage=3861&epage=3869&date=1997&atitle=Electro-absorptive+properties+of+interdiffused+InGaAsP/InP+quantum+wellsen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.365752en_HK
dc.identifier.scopuseid_2-s2.0-0141671272en_HK
dc.identifier.hkuros28223-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0141671272&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue8en_HK
dc.identifier.spage3861en_HK
dc.identifier.epage3869en_HK
dc.identifier.isiWOS:A1997YA57200029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.issnl0021-8979-

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