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Article: Electro-absorptive properties of interdiffused InGaAsP/InP quantum wells

TitleElectro-absorptive properties of interdiffused InGaAsP/InP quantum wells
Authors
KeywordsPhysics engineering
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1997, v. 82 n. 8, p. 3861-3869 How to Cite?
AbstractThe effects of Group III and Group V interdiffusions with a varied as-grown well width and P concentration in the quaternary InGaAsP quantum well material have been theoretically studied. Interesting features of multiple mini-well profiles, generated by interdiffusion induced compressive and tensile strains, have been obtained and varying envelope overlapping of the electron-hole wave functions has been observed. The results show that the interdiffusion of the Group III elements with a well width of 10 nm offers a wide adjustability of the operation wavelength, enhances Stark shift, and reduces absorption loss, although they bear the shortcomings of low electro-absorption and contrast ratio. Several methods are proposed here to recover the contrast ratio with a maximum improvement of 66%. For the Group V interdiffusion of a 10-nm-wide as-grown well, a low absorption loss and a large Stark shift will result, while that of a narrowed well can widen the band-edge wavelength adjustability with a large electro-absorption. These results are important for the development of electro-absorptive InGaAsP/InP diffused quantum well modulators. © 1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42762
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, EHen_HK
dc.contributor.authorChoy, WCHen_HK
dc.date.accessioned2007-03-23T04:31:41Z-
dc.date.available2007-03-23T04:31:41Z-
dc.date.issued1997en_HK
dc.identifier.citationJournal Of Applied Physics, 1997, v. 82 n. 8, p. 3861-3869en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42762-
dc.description.abstractThe effects of Group III and Group V interdiffusions with a varied as-grown well width and P concentration in the quaternary InGaAsP quantum well material have been theoretically studied. Interesting features of multiple mini-well profiles, generated by interdiffusion induced compressive and tensile strains, have been obtained and varying envelope overlapping of the electron-hole wave functions has been observed. The results show that the interdiffusion of the Group III elements with a well width of 10 nm offers a wide adjustability of the operation wavelength, enhances Stark shift, and reduces absorption loss, although they bear the shortcomings of low electro-absorption and contrast ratio. Several methods are proposed here to recover the contrast ratio with a maximum improvement of 66%. For the Group V interdiffusion of a 10-nm-wide as-grown well, a low absorption loss and a large Stark shift will result, while that of a narrowed well can widen the band-edge wavelength adjustability with a large electro-absorption. These results are important for the development of electro-absorptive InGaAsP/InP diffused quantum well modulators. © 1997 American Institute of Physics.en_HK
dc.format.extent222049 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleElectro-absorptive properties of interdiffused InGaAsP/InP quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=82&issue=8&spage=3861&epage=3869&date=1997&atitle=Electro-absorptive+properties+of+interdiffused+InGaAsP/InP+quantum+wellsen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.365752en_HK
dc.identifier.scopuseid_2-s2.0-0141671272en_HK
dc.identifier.hkuros28223-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0141671272&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue8en_HK
dc.identifier.spage3861en_HK
dc.identifier.epage3869en_HK
dc.identifier.isiWOS:A1997YA57200029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK

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