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Article: Polarization-insensitive electroabsorptive modulation using interdiffused InGaAs(P)-InP quantum wells

TitlePolarization-insensitive electroabsorptive modulation using interdiffused InGaAs(P)-InP quantum wells
Authors
KeywordsDiffusion process
Electrooptic modulation
Optical polarization
Quantum wells
Quantum-confined Stark effect
Quantum-well interdiffusion
Quantum-well intermixing
Strain layered material
Issue Date1997
PublisherIEEE.
Citation
Ieee Journal Of Quantum Electronics, 1997, v. 33 n. 8, p. 1316-1322 How to Cite?
AbstractThis is a theoretical study to demonstrate the use of interdiffusion in the realization of polarization insensitivity at the band-edge. Two InGaAs-InP quantum well as-grown structures have been investigated: one with lattice-matched condition and the other with small as-grown tensile strain (0.15%). The interdiffusion is considered to take place on the Group V (As and P) sublattice only. As a result, a tensile strain is produced which merges the heavy- and light-hole states in order to achieve polarization insensitivity. Criteria to develop polarization-insensitive quantum wells (QW's) using interdiffusion are presented here. When the two-phase interdiffusion mechanism is modeled, the results show that the well barrier interfaces of the QW maintain an abrupt profile while the well width remains constant after interdiffusion. The two interdiffused QW structures considered here can produce polarization insensitive electroabsorption at operation wavelengths around 1.55 μm. The one with lattice-matched condition is particularly attractive since it only requires an easy (high-yield) fabrication process with a simple postprocessing thermal annealing to achieve polarization insensitivity.
Persistent Identifierhttp://hdl.handle.net/10722/42761
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorMicallef, Jen_HK
dc.date.accessioned2007-03-23T04:31:39Z-
dc.date.available2007-03-23T04:31:39Z-
dc.date.issued1997en_HK
dc.identifier.citationIeee Journal Of Quantum Electronics, 1997, v. 33 n. 8, p. 1316-1322en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42761-
dc.description.abstractThis is a theoretical study to demonstrate the use of interdiffusion in the realization of polarization insensitivity at the band-edge. Two InGaAs-InP quantum well as-grown structures have been investigated: one with lattice-matched condition and the other with small as-grown tensile strain (0.15%). The interdiffusion is considered to take place on the Group V (As and P) sublattice only. As a result, a tensile strain is produced which merges the heavy- and light-hole states in order to achieve polarization insensitivity. Criteria to develop polarization-insensitive quantum wells (QW's) using interdiffusion are presented here. When the two-phase interdiffusion mechanism is modeled, the results show that the well barrier interfaces of the QW maintain an abrupt profile while the well width remains constant after interdiffusion. The two interdiffused QW structures considered here can produce polarization insensitive electroabsorption at operation wavelengths around 1.55 μm. The one with lattice-matched condition is particularly attractive since it only requires an easy (high-yield) fabrication process with a simple postprocessing thermal annealing to achieve polarization insensitivity.en_HK
dc.format.extent123129 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_HK
dc.rights©1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectDiffusion processen_HK
dc.subjectElectrooptic modulationen_HK
dc.subjectOptical polarizationen_HK
dc.subjectQuantum wellsen_HK
dc.subjectQuantum-confined Stark effecten_HK
dc.subjectQuantum-well interdiffusionen_HK
dc.subjectQuantum-well intermixingen_HK
dc.subjectStrain layered materialen_HK
dc.titlePolarization-insensitive electroabsorptive modulation using interdiffused InGaAs(P)-InP quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=33&issue=8&spage=1316&epage=1322&date=1997&atitle=Polarization-insensitive+electroabsorptive+modulation+using+interdiffused+InGaAs(P)-InP+quantum+wellsen_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.605553en_HK
dc.identifier.scopuseid_2-s2.0-0031208241en_HK
dc.identifier.hkuros28220-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031208241&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume33en_HK
dc.identifier.issue8en_HK
dc.identifier.spage1316en_HK
dc.identifier.epage1322en_HK
dc.identifier.isiWOS:A1997XL59300010-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK
dc.identifier.scopusauthoridMicallef, J=7005559986en_HK

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