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Article: The applications of an interdiffused quantum well in a normally on electroabsorptive fabry-perot reflection modulator

TitleThe applications of an interdiffused quantum well in a normally on electroabsorptive fabry-perot reflection modulator
Authors
Issue Date1997
PublisherIEEE.
Citation
Ieee Journal Of Quantum Electronics, 1997, v. 33 n. 3, p. 382-392 How to Cite?
AbstractA Fabry-Perot reflection-type modulator which uses interdiffused AlGaAs/GaAs quantum wells as the active cavity material has been studied and optimized theoretically. An asymmetric Bragg reflector structure (modeled by transfer matrices), with a doped depletion layer in the heterostructure, has been considered. This is the first study to model such a material system in this type of modulator, and the results show improvement in modulation property over its as-grown rectangular quantum-well modulator. In particular, the change of reflectance in the diffused quantum-well modulator is almost 0.6 to 0.7, which is higher than that of the typically available values (∼0.5 to 0.6), while the OFF-state on-resonance reflectance is almost close to zero. The operation voltage is also reduced by more than half as the interdiffusion becomes extensive. The finesse of the more extensively diffused quantum well also increases. Both of these features contribute to an improvement of the change of reflectance in the modulator. The operation wavelengths can be adjusted over a range of 100 nm. However, the absorption coefficient change of the diffused quantum well increases only when there is a small amount of interdiffusion.
Persistent Identifierhttp://hdl.handle.net/10722/42757
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:31:35Z-
dc.date.available2007-03-23T04:31:35Z-
dc.date.issued1997en_HK
dc.identifier.citationIeee Journal Of Quantum Electronics, 1997, v. 33 n. 3, p. 382-392en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42757-
dc.description.abstractA Fabry-Perot reflection-type modulator which uses interdiffused AlGaAs/GaAs quantum wells as the active cavity material has been studied and optimized theoretically. An asymmetric Bragg reflector structure (modeled by transfer matrices), with a doped depletion layer in the heterostructure, has been considered. This is the first study to model such a material system in this type of modulator, and the results show improvement in modulation property over its as-grown rectangular quantum-well modulator. In particular, the change of reflectance in the diffused quantum-well modulator is almost 0.6 to 0.7, which is higher than that of the typically available values (∼0.5 to 0.6), while the OFF-state on-resonance reflectance is almost close to zero. The operation voltage is also reduced by more than half as the interdiffusion becomes extensive. The finesse of the more extensively diffused quantum well also increases. Both of these features contribute to an improvement of the change of reflectance in the modulator. The operation wavelengths can be adjusted over a range of 100 nm. However, the absorption coefficient change of the diffused quantum well increases only when there is a small amount of interdiffusion.en_HK
dc.format.extent254606 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleThe applications of an interdiffused quantum well in a normally on electroabsorptive fabry-perot reflection modulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=33&issue=3&spage=382&epage=392&date=1997&atitle=The+applications+of+an+interdiffused+quantum+well+in+a+normally+on+electroabsorptive+Fabry-Perot+reflection+modulatoren_HK
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, WCH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/3.556007en_HK
dc.identifier.scopuseid_2-s2.0-0031100319en_HK
dc.identifier.hkuros28148-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031100319&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume33en_HK
dc.identifier.issue3en_HK
dc.identifier.spage382en_HK
dc.identifier.epage392en_HK
dc.identifier.isiWOS:A1997WK54500014-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoy, WCH=7006202371en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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