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Article: AC hot-carrier-induced degradation in NMOSFET's with N 2O-based gate dielectrics

TitleAC hot-carrier-induced degradation in NMOSFET's with N 2O-based gate dielectrics
Authors
Zeng, XLai, PTNg, WT
Issue Date1997
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1997, v. 18 n. 2, p. 39-41 How to Cite?
DOI: http://dx.doi.org/10.1109/55.553037
AbstractFrequency-dependent ac-stress-induced degradation in NMOSFET's with N 2O-grown and N 2O-nitrided gate oxides was investigated. Suppressed device degradation is observed in both N 2O-based devices as compared to SiO 2 device for frequency up to 100 kHz, which is attributed to nitrogen incorporation in the gate oxides. Moreover, when comparing the two N 2O-based oxides, N 2O-grown oxide device exhibits enhanced degradation than N 2O-nitrided oxide device. Charge pumping measurements reveal that N 2O-nitrided oxide has better immunity to interface-state and neutral-electron-trap generation under dynamic stress.
Persistent Identifierhttp://hdl.handle.net/10722/42735
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZeng, Xen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorNg, WTen_HK
dc.date.accessioned2007-03-23T04:31:09Z-
dc.date.available2007-03-23T04:31:09Z-
dc.date.issued1997en_HK
dc.identifier.citationIeee Electron Device Letters, 1997, v. 18 n. 2, p. 39-41en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42735-
dc.description.abstractFrequency-dependent ac-stress-induced degradation in NMOSFET's with N 2O-grown and N 2O-nitrided gate oxides was investigated. Suppressed device degradation is observed in both N 2O-based devices as compared to SiO 2 device for frequency up to 100 kHz, which is attributed to nitrogen incorporation in the gate oxides. Moreover, when comparing the two N 2O-based oxides, N 2O-grown oxide device exhibits enhanced degradation than N 2O-nitrided oxide device. Charge pumping measurements reveal that N 2O-nitrided oxide has better immunity to interface-state and neutral-electron-trap generation under dynamic stress.en_HK
dc.format.extent72403 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleAC hot-carrier-induced degradation in NMOSFET's with N 2O-based gate dielectricsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=18&issue=2&spage=39&epage=41&date=1997&atitle=AC+hot-carrier-induced+degradation+in+NMOSFETs+with+N2O-based+gate+dielectricsen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.553037en_HK
dc.identifier.scopuseid_2-s2.0-0031075236en_HK
dc.identifier.hkuros26231-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031075236&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume18en_HK
dc.identifier.issue2en_HK
dc.identifier.spage39en_HK
dc.identifier.epage41en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZeng, X=7403248314en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridNg, WT=7401613512en_HK
dc.identifier.issnl0741-3106-

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