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Article: A novel technique of N2O-treatment on NH3-nitrided oxide as gate dielectric for nMOS transistors

TitleA novel technique of N2O-treatment on NH3-nitrided oxide as gate dielectric for nMOS transistors
Authors
Zeng, XLai, PTNg, WT
Issue Date1996
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 1996, v. 43 n. 11, p. 1907-1913 How to Cite?
DOI: http://dx.doi.org/10.1109/16.543026
AbstractA novel technique of N2O treatment on NH3-nitrided oxide is used to prepare thin gate oxide. Experiments on MOS capacitors and nMOSFET's with this kind of gate dielectric show that N2O treatment is superior to conventional reoxidation step in suppressing both electron and hole trappings and interface trap creation under high-field stress. Interface hardness against hot-carrier bombardment and neutral electron trap generation are also improved. Thus, N2O treatment on NH3 -nitrided oxide shows excellent electrical and reliability properties, while maintaining sufficiently high nitrogen concentration in gate oxide which offers good resistance to dopant penetration.
Persistent Identifierhttp://hdl.handle.net/10722/42734
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:A1996VR35600020
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZeng, Xen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorNg, WTen_HK
dc.date.accessioned2007-03-23T04:31:08Z-
dc.date.available2007-03-23T04:31:08Z-
dc.date.issued1996en_HK
dc.identifier.citationIEEE Transactions on Electron Devices, 1996, v. 43 n. 11, p. 1907-1913en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42734-
dc.description.abstractA novel technique of N2O treatment on NH3-nitrided oxide is used to prepare thin gate oxide. Experiments on MOS capacitors and nMOSFET's with this kind of gate dielectric show that N2O treatment is superior to conventional reoxidation step in suppressing both electron and hole trappings and interface trap creation under high-field stress. Interface hardness against hot-carrier bombardment and neutral electron trap generation are also improved. Thus, N2O treatment on NH3 -nitrided oxide shows excellent electrical and reliability properties, while maintaining sufficiently high nitrogen concentration in gate oxide which offers good resistance to dopant penetration.en_HK
dc.format.extent746421 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rights©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleA novel technique of N2O-treatment on NH3-nitrided oxide as gate dielectric for nMOS transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=43&issue=11&spage=1907&epage=1913&date=1996&atitle=A+novel+technique+of+N2O-treatment+on+NH3-nitrided+oxide+as+gate+dielectric+for+nMOS+transistorsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.543026en_HK
dc.identifier.scopuseid_2-s2.0-0030287694-
dc.identifier.hkuros26212-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33747925452&selection=ref&src=s&origin=recordpage-
dc.identifier.isiWOS:A1996VR35600020-
dc.identifier.scopusauthoridZeng, X=7403248314-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridNg, WT=7401613512-
dc.identifier.issnl0018-9383-

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