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Article: Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric
Title | Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric |
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Authors | |
Issue Date | 1995 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | IEEE Electron Device Letters, 1995, v. 16 n. 10, p. 436-438 How to Cite? |
Abstract | This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications. |
Persistent Identifier | http://hdl.handle.net/10722/42723 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Xu, Z | en_HK |
dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Ng, WT | en_HK |
dc.date.accessioned | 2007-03-23T04:30:54Z | - |
dc.date.available | 2007-03-23T04:30:54Z | - |
dc.date.issued | 1995 | en_HK |
dc.identifier.citation | IEEE Electron Device Letters, 1995, v. 16 n. 10, p. 436-438 | en_HK |
dc.identifier.issn | 0741-3106 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42723 | - |
dc.description.abstract | This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications. | en_HK |
dc.format.extent | 264187 bytes | - |
dc.format.extent | 27648 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | en_HK |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.rights | ©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.title | Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=16&issue=10&spage=436&epage=438&date=1995&atitle=Enhanced+off-state+leakage+currents+in+n-channel+MOSFETs+with+N2O-grown+gate+dielectric | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/55.464809 | - |
dc.identifier.scopus | eid_2-s2.0-0029393094 | - |
dc.identifier.hkuros | 12527 | - |
dc.identifier.isi | WOS:A1995RW04900007 | - |
dc.publisher.place | United States | - |
dc.identifier.scopusauthorid | Xu, Zeng=7405429249 | - |
dc.identifier.scopusauthorid | Ng, WT=7401613512 | - |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | - |
dc.identifier.issnl | 0741-3106 | - |