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Article: InGaN Microring Light-Emitting Diodes

TitleInGaN Microring Light-Emitting Diodes
Authors
KeywordsExtraction efficiency
Gallium nitride
Light-emitting diode (LED)
Microlight-emitting diode
Microring
Issue Date2004
PublisherIEEE.
Citation
Ieee Photonics Technology Letters, 2004, v. 16 n. 1, p. 33-35 How to Cite?
AbstractThe fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and reabsorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, while the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.
Persistent Identifierhttp://hdl.handle.net/10722/42717
ISSN
2015 Impact Factor: 1.945
2015 SCImago Journal Rankings: 1.433
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorJeon, CWen_HK
dc.contributor.authorDawson, MDen_HK
dc.date.accessioned2007-03-23T04:30:46Z-
dc.date.available2007-03-23T04:30:46Z-
dc.date.issued2004en_HK
dc.identifier.citationIeee Photonics Technology Letters, 2004, v. 16 n. 1, p. 33-35en_HK
dc.identifier.issn1041-1135en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42717-
dc.description.abstractThe fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and reabsorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, while the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.en_HK
dc.format.extent155641 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Photonics Technology Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectExtraction efficiencyen_HK
dc.subjectGallium nitrideen_HK
dc.subjectLight-emitting diode (LED)en_HK
dc.subjectMicrolight-emitting diodeen_HK
dc.subjectMicroringen_HK
dc.titleInGaN Microring Light-Emitting Diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1041-1135&volume=16&issue=1&spage=33&epage=35&date=2004&atitle=InGaN+Microring+Light+Emitting+Diodesen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/LPT.2003.818903en_HK
dc.identifier.scopuseid_2-s2.0-0346707367en_HK
dc.identifier.hkuros109871-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0346707367&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue1en_HK
dc.identifier.spage33en_HK
dc.identifier.epage35en_HK
dc.identifier.isiWOS:000187885800011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridJeon, CW=7006894315en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK

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