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Article: GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

TitleGaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 84 n. 13, p. 2253-2255 How to Cite?
AbstractA microdisk light emitting diode (micro-LED) with a monolithically integrated microlens array was demonstrated. The capability of the lenses in concentrating light emitted from microdisk LEDs was also demonstrated. The focal lengths of the microlenses were determined to be around 44 νm. The emission pattern of the LED emitters was found to be altered by the optical properties of the microlenses. The light emitted by the hybrid device was also found to be less divergent than a broad-area device.
Persistent Identifierhttp://hdl.handle.net/10722/42715
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorLiu, Cen_HK
dc.contributor.authorGu, Een_HK
dc.contributor.authorMcConnell, Gen_HK
dc.contributor.authorGirkin, JMen_HK
dc.contributor.authorWatson, IMen_HK
dc.contributor.authorDawson, MDen_HK
dc.date.accessioned2007-03-23T04:30:44Z-
dc.date.available2007-03-23T04:30:44Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 84 n. 13, p. 2253-2255en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42715-
dc.description.abstractA microdisk light emitting diode (micro-LED) with a monolithically integrated microlens array was demonstrated. The capability of the lenses in concentrating light emitted from microdisk LEDs was also demonstrated. The focal lengths of the microlenses were determined to be around 44 νm. The emission pattern of the LED emitters was found to be altered by the optical properties of the microlenses. The light emitted by the hybrid device was also found to be less divergent than a broad-area device.en_HK
dc.format.extent208058 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleGaN micro-light-emitting diode arrays with monolithically integrated sapphire microlensesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=84&issue=13&spage=2253&epage=2255&date=2004&atitle=GaN+micro-light-emitting+diode+arrays+with+monolithically+integrated+sapphire+microlensesen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1690876en_HK
dc.identifier.scopuseid_2-s2.0-2142753095en_HK
dc.identifier.hkuros109858-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2142753095&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue13en_HK
dc.identifier.spage2253en_HK
dc.identifier.epage2255en_HK
dc.identifier.isiWOS:000220591500011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridLiu, C=36064477300en_HK
dc.identifier.scopusauthoridGu, E=7004420026en_HK
dc.identifier.scopusauthoridMcConnell, G=7004466744en_HK
dc.identifier.scopusauthoridGirkin, JM=6701651108en_HK
dc.identifier.scopusauthoridWatson, IM=24482692400en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK

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