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Article: InGaN nano-ring structures for high-efficiency light emitting diodes

TitleInGaN nano-ring structures for high-efficiency light emitting diodes
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 2, p. 021101-1-021101-3 How to Cite?
AbstractA technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42697
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorJeon, CWen_HK
dc.contributor.authorLiu, Cen_HK
dc.contributor.authorWatson, IMen_HK
dc.contributor.authorDawson, MDen_HK
dc.contributor.authorEdwards, PRen_HK
dc.contributor.authorMartin, RWen_HK
dc.contributor.authorTripathy, Sen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2007-03-23T04:30:20Z-
dc.date.available2007-03-23T04:30:20Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 2, p. 021101-1-021101-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42697-
dc.description.abstractA technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated. © 2005 American Institute of Physics.en_HK
dc.format.extent492598 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleInGaN nano-ring structures for high-efficiency light emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&issue=2&spage=021101:1&epage=3&date=2005&atitle=InGaN+nano-ring+structures+for+high-efficiency+light+emitting+diodesen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1849439en_HK
dc.identifier.scopuseid_2-s2.0-19744383963en_HK
dc.identifier.hkuros102785-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-19744383963&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue2en_HK
dc.identifier.spage021101en_HK
dc.identifier.epage1en_HK
dc.identifier.isiWOS:000226701500001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridJeon, CW=7006894315en_HK
dc.identifier.scopusauthoridLiu, C=36064477300en_HK
dc.identifier.scopusauthoridWatson, IM=24482692400en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK
dc.identifier.scopusauthoridEdwards, PR=7401881875en_HK
dc.identifier.scopusauthoridMartin, RW=9742683000en_HK
dc.identifier.scopusauthoridTripathy, S=8698106400en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK

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