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Article: Standard cell layout with regular contact placement
Title | Standard cell layout with regular contact placement |
---|---|
Authors | |
Keywords | Double exposure Fabrication-friendly layout Low k1 lithography Regularly placed contact RETs Standard cells |
Issue Date | 2004 |
Publisher | IEEE. |
Citation | Ieee Transactions On Semiconductor Manufacturing, 2004, v. 17 n. 3, p. 375-383 How to Cite? |
Abstract | The practicability and methodology of applying regularly placed contacts on layout design of standard cells are studied. The regular placement enables more effective use of resolution enhancement technologies, which in turn allows for a reduction of critical dimensions. Although placing contacts on a grid adds restrictions during cell layout, overall circuit area can be made smaller by a careful selection of the grid pitch, allowing slight contact offset, applying double exposure, and shrinking the minimum size and pitch. The contact level of 250 nm standard cells was shrunk by 10%, resulting in an area change ranging from -20% to +25% with an average decrease of 5% for the 84 cells studied. The areas of two circuits, a finite-impulse-response (FIR) filter and an add-compare-select (ACS) unit in the Viterbi decoder, decrease by 4% and 2%, respectively. |
Persistent Identifier | http://hdl.handle.net/10722/42686 |
ISSN | 2023 Impact Factor: 2.3 2023 SCImago Journal Rankings: 0.967 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, J | en_HK |
dc.contributor.author | Wong, AK | en_HK |
dc.contributor.author | Lam, EY | en_HK |
dc.date.accessioned | 2007-03-23T04:30:05Z | - |
dc.date.available | 2007-03-23T04:30:05Z | - |
dc.date.issued | 2004 | en_HK |
dc.identifier.citation | Ieee Transactions On Semiconductor Manufacturing, 2004, v. 17 n. 3, p. 375-383 | en_HK |
dc.identifier.issn | 0894-6507 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42686 | - |
dc.description.abstract | The practicability and methodology of applying regularly placed contacts on layout design of standard cells are studied. The regular placement enables more effective use of resolution enhancement technologies, which in turn allows for a reduction of critical dimensions. Although placing contacts on a grid adds restrictions during cell layout, overall circuit area can be made smaller by a careful selection of the grid pitch, allowing slight contact offset, applying double exposure, and shrinking the minimum size and pitch. The contact level of 250 nm standard cells was shrunk by 10%, resulting in an area change ranging from -20% to +25% with an average decrease of 5% for the 84 cells studied. The areas of two circuits, a finite-impulse-response (FIR) filter and an add-compare-select (ACS) unit in the Viterbi decoder, decrease by 4% and 2%, respectively. | en_HK |
dc.format.extent | 1529695 bytes | - |
dc.format.extent | 25600 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | IEEE. | en_HK |
dc.relation.ispartof | IEEE Transactions on Semiconductor Manufacturing | en_HK |
dc.rights | ©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | Double exposure | en_HK |
dc.subject | Fabrication-friendly layout | en_HK |
dc.subject | Low k1 lithography | en_HK |
dc.subject | Regularly placed contact | en_HK |
dc.subject | RETs | en_HK |
dc.subject | Standard cells | en_HK |
dc.title | Standard cell layout with regular contact placement | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0894-6507&volume=17&issue=3&spage=375&epage=383&date=2004&atitle=Standard+cell+layout+with+regular+contact+placement | en_HK |
dc.identifier.email | Lam, EY:elam@eee.hku.hk | en_HK |
dc.identifier.authority | Lam, EY=rp00131 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/TSM.2004.831522 | en_HK |
dc.identifier.scopus | eid_2-s2.0-4344694445 | en_HK |
dc.identifier.hkuros | 101032 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-4344694445&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 17 | en_HK |
dc.identifier.issue | 3 | en_HK |
dc.identifier.spage | 375 | en_HK |
dc.identifier.epage | 383 | en_HK |
dc.identifier.isi | WOS:000223187900019 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Wang, J=8716933500 | en_HK |
dc.identifier.scopusauthorid | Wong, AK=7403147663 | en_HK |
dc.identifier.scopusauthorid | Lam, EY=7102890004 | en_HK |
dc.identifier.issnl | 0894-6507 | - |