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Article: Improved current spreading in 370 nm AlGaN microring light emitting diodes

TitleImproved current spreading in 370 nm AlGaN microring light emitting diodes
Authors
Choi, HWDawson, MD
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 5, article no. 053504, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1861130
AbstractThe electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n -type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42685
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000227144700057
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorDawson, MDen_HK
dc.date.accessioned2007-03-23T04:30:03Z-
dc.date.available2007-03-23T04:30:03Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 5, article no. 053504, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42685-
dc.description.abstractThe electrical and optical characteristics of a 370 nm AlGaN light-emitting diode based on a microring geometry is presented. By structuring the light emission area into an interconnected array of microscale rings, current spreading in the n -type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. As a result, optical output power from the microring light-emitting diode is improved compared to a conventional device of broad area geometry. © 2005 American Institute of Physics.en_HK
dc.format.extent190343 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 86 n. 5, article no. 053504, p. 1-3 and may be found at https://doi.org/10.1063/1.1861130-
dc.subjectPhysics engineeringen_HK
dc.titleImproved current spreading in 370 nm AlGaN microring light emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&spage=053504:1&epage=3&date=2005&atitle=Improved+Current+Spreading+in+370+nm+AlGaN+Microring+Light+Emitting+Diodesen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1861130en_HK
dc.identifier.scopuseid_2-s2.0-18644373494en_HK
dc.identifier.hkuros100423-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-18644373494&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue5en_HK
dc.identifier.spagearticle no. 053504, p. 1-
dc.identifier.epagearticle no. 053504, p. 3-
dc.identifier.isiWOS:000227144700057-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridDawson, MD=7203061779en_HK
dc.identifier.issnl0003-6951-

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