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Article: Current-induced metastable resistive state in epitaxial thin films of La1-xCaxMnO3 (x=0.2, 0.3)
| Title | Current-induced metastable resistive state in epitaxial thin films of La1-xCaxMnO3 (x=0.2, 0.3) |
|---|---|
| Authors | |
| Keywords | Physics engineering |
| Issue Date | 2005 |
| Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
| Citation | Applied Physics Letters, 2005, v. 86 n. 9, article no. 092504, p. 1-3 How to Cite? |
| Abstract | The influence of a transport dc current on electric resistivity has been investigated in epitaxial thin films of La1–xCaxMnO3 (x = 0.2, 0.3). A most prominent finding is the appearance of a remarkable resistive peak at temperatures well below the Curie temperature Tc. Such a resistive peak is developed when the dc current over a critical value was applied in a temperature cycling from 300 to 10 K. The resistance peak turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak. Such a current-induced state with high resistivity is metastable compared to the pristine state. The stability of the induced state has been also studied. © 2005 American Institute of Physics. |
| Persistent Identifier | http://hdl.handle.net/10722/42504 |
| ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gao, J | en_HK |
| dc.contributor.author | Hu, FX | en_HK |
| dc.date.accessioned | 2007-01-29T08:51:17Z | - |
| dc.date.available | 2007-01-29T08:51:17Z | - |
| dc.date.issued | 2005 | en_HK |
| dc.identifier.citation | Applied Physics Letters, 2005, v. 86 n. 9, article no. 092504, p. 1-3 | - |
| dc.identifier.issn | 0003-6951 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/42504 | - |
| dc.description.abstract | The influence of a transport dc current on electric resistivity has been investigated in epitaxial thin films of La1–xCaxMnO3 (x = 0.2, 0.3). A most prominent finding is the appearance of a remarkable resistive peak at temperatures well below the Curie temperature Tc. Such a resistive peak is developed when the dc current over a critical value was applied in a temperature cycling from 300 to 10 K. The resistance peak turns out to be extremely sensitive to a weak current. Even a very small current could greatly depress the height of the peak. Such a current-induced state with high resistivity is metastable compared to the pristine state. The stability of the induced state has been also studied. © 2005 American Institute of Physics. | en_HK |
| dc.format.extent | 74554 bytes | - |
| dc.format.extent | 28672 bytes | - |
| dc.format.mimetype | application/pdf | - |
| dc.format.mimetype | application/msword | - |
| dc.language | eng | en_HK |
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
| dc.relation.ispartof | Applied Physics Letters | - |
| dc.rights | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 86 n. 9, article no. 092504, p. 1-3 and may be found at https://doi.org/10.1063/1.1870128 | - |
| dc.subject | Physics engineering | en_HK |
| dc.title | Current-induced metastable resistive state in epitaxial thin films of La1-xCaxMnO3 (x=0.2, 0.3) | en_HK |
| dc.type | Article | en_HK |
| dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&spage=092504:1&epage=3&date=2005&atitle=Current-induced+metastable+resistive+state+in+epitaxial+thin+films+of+La1-xCaxMnO3+(x=0.2,+0.3) | en_HK |
| dc.description.nature | published_or_final_version | en_HK |
| dc.identifier.doi | 10.1063/1.1870128 | en_HK |
| dc.identifier.scopus | eid_2-s2.0-17044391911 | - |
| dc.identifier.hkuros | 97384 | - |
| dc.identifier.volume | 86 | - |
| dc.identifier.issue | 9 | - |
| dc.identifier.spage | article no. 092504, p. 1 | - |
| dc.identifier.epage | article no. 092504, p. 3 | - |
| dc.identifier.isi | WOS:000228991600041 | - |
| dc.identifier.issnl | 0003-6951 | - |