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Article: Gate-controllable spin battery

TitleGate-controllable spin battery
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 83 n. 7, p. 1397-1399 How to Cite?
AbstractWe propose a gate-controllable spin-battery for spin current. The spin battery consists of a lateral double quantum dot under a uniform magnetic field. A finite dc spin current is driven out of the device by controlling a set of gate voltages. Spin current can also be delivered in the absence of charge current. The proposed device should be realizable using present technology at low temperature. © 2003 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42487
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLong, Wen_HK
dc.contributor.authorSun, QFen_HK
dc.contributor.authorGuo, Hen_HK
dc.contributor.authorWang, Jen_HK
dc.date.accessioned2007-01-29T08:50:59Z-
dc.date.available2007-01-29T08:50:59Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 7, p. 1397-1399en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42487-
dc.description.abstractWe propose a gate-controllable spin-battery for spin current. The spin battery consists of a lateral double quantum dot under a uniform magnetic field. A finite dc spin current is driven out of the device by controlling a set of gate voltages. Spin current can also be delivered in the absence of charge current. The proposed device should be realizable using present technology at low temperature. © 2003 American Institute of Physics.en_HK
dc.format.extent79183 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleGate-controllable spin batteryen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=83&issue=7&spage=1397&epage=1399&date=2003&atitle=Gate-controllable+spin+batteryen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1603331en_HK
dc.identifier.scopuseid_2-s2.0-0042418749-
dc.identifier.hkuros84984-
dc.identifier.isiWOS:000184748600039-

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