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Article: Good rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3-δ/Nb–0.7 wt %-doped SrTiO3
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TitleGood rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3-δ/Nb–0.7 wt %-doped SrTiO3
 
AuthorsHu, FX2
Gao, J2
Sun, JR1
Shen, BG1
 
KeywordsPhysics engineering
 
Issue Date2003
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2003, v. 83 n. 9, p. 1869-1871 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.1606098
 
AbstractSimple p–n junctions have been fabricated using a simple heteroepitaxial structure of La0.67Ca0.33MnO3–/Nb-doped SrTiO3. In such junctions, the La0.67Ca0.33MnO3– exhibits semiconductor behavior due to oxygen deficiency, whereas the Nb–0.7 wt %-doped SrTiO3 shows a metal behavior. These junctions demonstrate good rectifying characteristic in a wide temperature range from 5 to 350 K. An intriguing observation is that the rectifying behavior is nearly independent of temperature. © 2003 American Institute of Physics.
 
ISSN0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
DOIhttp://dx.doi.org/10.1063/1.1606098
 
ISI Accession Number IDWOS:000184992000061
 
DC FieldValue
dc.contributor.authorHu, FX
 
dc.contributor.authorGao, J
 
dc.contributor.authorSun, JR
 
dc.contributor.authorShen, BG
 
dc.date.accessioned2007-01-29T08:50:58Z
 
dc.date.available2007-01-29T08:50:58Z
 
dc.date.issued2003
 
dc.description.abstractSimple p–n junctions have been fabricated using a simple heteroepitaxial structure of La0.67Ca0.33MnO3–/Nb-doped SrTiO3. In such junctions, the La0.67Ca0.33MnO3– exhibits semiconductor behavior due to oxygen deficiency, whereas the Nb–0.7 wt %-doped SrTiO3 shows a metal behavior. These junctions demonstrate good rectifying characteristic in a wide temperature range from 5 to 350 K. An intriguing observation is that the rectifying behavior is nearly independent of temperature. © 2003 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent59498 bytes
 
dc.format.extent28672 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypeapplication/msword
 
dc.identifier.citationApplied Physics Letters, 2003, v. 83 n. 9, p. 1869-1871 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.1606098
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.1606098
 
dc.identifier.isiWOS:000184992000061
 
dc.identifier.issn0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-0141522959
 
dc.identifier.urihttp://hdl.handle.net/10722/42486
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering
 
dc.titleGood rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3-δ/Nb–0.7 wt %-doped SrTiO3
 
dc.typeArticle
 
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Author Affiliations
  1. Institute of Physics Chinese Academy of Sciences
  2. The University of Hong Kong