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Article: Formation of outgrowths at the initial growing stage of YBa2Cu3Ox ultrathin films on ZrO2 substrates
Title | Formation of outgrowths at the initial growing stage of YBa2Cu3Ox ultrathin films on ZrO2 substrates |
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Authors | |
Keywords | Physics engineering |
Issue Date | 1995 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 1995, v. 67 n. 15, p. 2232-2234 How to Cite? |
Abstract | Ultrathin films of YBa2Cu3Ox with good crystallinity and superconductivity were prepared by a modified off-axis sputtering. The microstructure, with emphasis on surface morphology and formation of outgrowths, was studied by using atomic force microscopy and electron microscopy. It was found that many outgrowths were formed at the initial growing stage. Therefore it is important to suppress the nucleation of outgrowths at a very early growing step to obtain a smooth film. The nucleation of outgrowths is significantly influenced by surface defects on the substrate. Discussion is also made in correlation with the occurrence of an intermediate layer commonly observed onZrO2. From our observation, YBa2Cu3Ox might be grown directly on the surface of ZrO2 without forming any intermediate layer, if the film thickness is very small. ©1995 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42478 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Gao, J | en_HK |
dc.contributor.author | Wong, WH | en_HK |
dc.contributor.author | Xhie, J | en_HK |
dc.date.accessioned | 2007-01-29T08:50:50Z | - |
dc.date.available | 2007-01-29T08:50:50Z | - |
dc.date.issued | 1995 | en_HK |
dc.identifier.citation | Applied Physics Letters, 1995, v. 67 n. 15, p. 2232-2234 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42478 | - |
dc.description.abstract | Ultrathin films of YBa2Cu3Ox with good crystallinity and superconductivity were prepared by a modified off-axis sputtering. The microstructure, with emphasis on surface morphology and formation of outgrowths, was studied by using atomic force microscopy and electron microscopy. It was found that many outgrowths were formed at the initial growing stage. Therefore it is important to suppress the nucleation of outgrowths at a very early growing step to obtain a smooth film. The nucleation of outgrowths is significantly influenced by surface defects on the substrate. Discussion is also made in correlation with the occurrence of an intermediate layer commonly observed onZrO2. From our observation, YBa2Cu3Ox might be grown directly on the surface of ZrO2 without forming any intermediate layer, if the film thickness is very small. ©1995 American Institute of Physics. | en_HK |
dc.format.extent | 198536 bytes | - |
dc.format.extent | 28672 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | - |
dc.rights | Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1995, v. 67 n. 15, p. 2232-2234 and may be found at https://doi.org/10.1063/1.115113 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Formation of outgrowths at the initial growing stage of YBa2Cu3Ox ultrathin films on ZrO2 substrates | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=67&issue=15&spage=2232&epage=2234&date=1995&atitle=Formation+of+outgrowths+at+the+initial+growing+stage+of+YBa2Cu3Ox+ultrathin+films+on+ZrO2+substrates | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.115113 | en_HK |
dc.identifier.scopus | eid_2-s2.0-36448999740 | - |
dc.identifier.hkuros | 7654 | - |
dc.identifier.volume | 67 | - |
dc.identifier.issue | 15 | - |
dc.identifier.spage | 2232 | - |
dc.identifier.epage | 2234 | - |
dc.identifier.isi | WOS:A1995RY39800042 | - |
dc.identifier.issnl | 0003-6951 | - |