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Article: Formation of outgrowths at the initial growing stage of YBa2Cu3Ox ultrathin films on ZrO2 substrates

TitleFormation of outgrowths at the initial growing stage of YBa2Cu3Ox ultrathin films on ZrO2 substrates
Authors
KeywordsPhysics engineering
Issue Date1995
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1995, v. 67 n. 15, p. 2232-2234 How to Cite?
AbstractUltrathin films of YBa2Cu3Ox with good crystallinity and superconductivity were prepared by a modified off-axis sputtering. The microstructure, with emphasis on surface morphology and formation of outgrowths, was studied by using atomic force microscopy and electron microscopy. It was found that many outgrowths were formed at the initial growing stage. Therefore it is important to suppress the nucleation of outgrowths at a very early growing step to obtain a smooth film. The nucleation of outgrowths is significantly influenced by surface defects on the substrate. Discussion is also made in correlation with the occurrence of an intermediate layer commonly observed onZrO2. From our observation, YBa2Cu3Ox might be grown directly on the surface of ZrO2 without forming any intermediate layer, if the film thickness is very small. ©1995 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42478
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorWong, WHen_HK
dc.contributor.authorXhie, Jen_HK
dc.date.accessioned2007-01-29T08:50:50Z-
dc.date.available2007-01-29T08:50:50Z-
dc.date.issued1995en_HK
dc.identifier.citationApplied Physics Letters, 1995, v. 67 n. 15, p. 2232-2234en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42478-
dc.description.abstractUltrathin films of YBa2Cu3Ox with good crystallinity and superconductivity were prepared by a modified off-axis sputtering. The microstructure, with emphasis on surface morphology and formation of outgrowths, was studied by using atomic force microscopy and electron microscopy. It was found that many outgrowths were formed at the initial growing stage. Therefore it is important to suppress the nucleation of outgrowths at a very early growing step to obtain a smooth film. The nucleation of outgrowths is significantly influenced by surface defects on the substrate. Discussion is also made in correlation with the occurrence of an intermediate layer commonly observed onZrO2. From our observation, YBa2Cu3Ox might be grown directly on the surface of ZrO2 without forming any intermediate layer, if the film thickness is very small. ©1995 American Institute of Physics.en_HK
dc.format.extent198536 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleFormation of outgrowths at the initial growing stage of YBa2Cu3Ox ultrathin films on ZrO2 substratesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=67&issue=15&spage=2232&epage=2234&date=1995&atitle=Formation+of+outgrowths+at+the+initial+growing+stage+of+YBa2Cu3Ox+ultrathin+films+on+ZrO2+substratesen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.115113en_HK
dc.identifier.scopuseid_2-s2.0-36448999740-
dc.identifier.hkuros7654-
dc.identifier.isiWOS:A1995RY39800042-

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