File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Depth profiling of Si nanocrystals in Si-implanted SiO2 films by spectroscopic ellipsometry

TitleDepth profiling of Si nanocrystals in Si-implanted SiO2 films by spectroscopic ellipsometry
Authors
Chen, TPLiu, YTse, MSHo, PFDong, GFung, S
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 81 n. 25, p. 4724-4726 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1528286
AbstractAn approach to determine depth profiles of silicon nanocrystals in silica films was developed. In the spectral fittings, the dielectric function of silicon nanocrystal was calculated based on two different models for the band-gap expansion due to the nanocrystal size reduction. The fitting yielded the nanocrystal depth profile and the nanocrystal size.
Persistent Identifierhttp://hdl.handle.net/10722/42475
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000179731000014
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorHo, PFen_HK
dc.contributor.authorDong, Gen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-29T08:50:47Z-
dc.date.available2007-01-29T08:50:47Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 81 n. 25, p. 4724-4726-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42475-
dc.description.abstractAn approach to determine depth profiles of silicon nanocrystals in silica films was developed. In the spectral fittings, the dielectric function of silicon nanocrystal was calculated based on two different models for the band-gap expansion due to the nanocrystal size reduction. The fitting yielded the nanocrystal depth profile and the nanocrystal size.en_HK
dc.format.extent92441 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 81 n. 25, p. 4724-4726 and may be found at https://doi.org/10.1063/1.1528286-
dc.subjectPhysics engineeringen_HK
dc.titleDepth profiling of Si nanocrystals in Si-implanted SiO2 films by spectroscopic ellipsometryen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=81&issue=25&spage=4724&epage=4726&date=2002&atitle=Depth+profiling+of+Si+nanocrystals+in+Si-implanted+SiO2+films+by+spectroscopic+ellipsometryen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1528286en_HK
dc.identifier.scopuseid_2-s2.0-0037449285en_HK
dc.identifier.hkuros75602-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037449285&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue25en_HK
dc.identifier.spage4724en_HK
dc.identifier.epage4726en_HK
dc.identifier.isiWOS:000179731000014-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridHo, PF=7402211535en_HK
dc.identifier.scopusauthoridDong, G=7201472362en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats