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Article: Competition between ferromagnetic metallic and paramagnetic insulating phases in manganites

TitleCompetition between ferromagnetic metallic and paramagnetic insulating phases in manganites
Authors
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2002, v. 92 n. 3, p. 1406-1410 How to Cite?
AbstractLa 0.67Ca 0.33Mn 1-xCu xO 3 (x=0 and 0.15) epitaxial thin films were grown on the (100) LaAlO 3 substrates, and the temperature dependence of their resistivity was measured in magnetic fields up to 12 T by a four-probe technique. We found that the competition between the ferromagnetic metallic (FM) and paramagnetic insulating (PI) phases plays an important role in the observed colossal magnetoresistance (CMR) effect. Based on a scenario that the doped manganites approximately consist of phase-separated FM and PI regions, a simple phenomenological model was proposed to describe the CMR effect. Using this model, we calculated the resistivity as functions of temperature and magnetic field. The model not only qualitatively accounts for some main features related to the CMR effect, but also quantitatively agrees with the experimental observations. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42472
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Gen_HK
dc.contributor.authorZhou, HDen_HK
dc.contributor.authorFeng, SJen_HK
dc.contributor.authorFan, XJen_HK
dc.contributor.authorLi, XGen_HK
dc.contributor.authorWang, ZDen_HK
dc.date.accessioned2007-01-29T08:50:43Z-
dc.date.available2007-01-29T08:50:43Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal Of Applied Physics, 2002, v. 92 n. 3, p. 1406-1410en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42472-
dc.description.abstractLa 0.67Ca 0.33Mn 1-xCu xO 3 (x=0 and 0.15) epitaxial thin films were grown on the (100) LaAlO 3 substrates, and the temperature dependence of their resistivity was measured in magnetic fields up to 12 T by a four-probe technique. We found that the competition between the ferromagnetic metallic (FM) and paramagnetic insulating (PI) phases plays an important role in the observed colossal magnetoresistance (CMR) effect. Based on a scenario that the doped manganites approximately consist of phase-separated FM and PI regions, a simple phenomenological model was proposed to describe the CMR effect. Using this model, we calculated the resistivity as functions of temperature and magnetic field. The model not only qualitatively accounts for some main features related to the CMR effect, but also quantitatively agrees with the experimental observations. © 2002 American Institute of Physics.en_HK
dc.format.extent93001 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleCompetition between ferromagnetic metallic and paramagnetic insulating phases in manganitesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=92&issue=3&spage=1406&epage=1410 &date=2002&atitle=Competition+between+ferromagnetic+metallic+and+paramagnetic+insulating+phases+in+manganitesen_HK
dc.identifier.emailWang, ZD: zwang@hkucc.hku.hken_HK
dc.identifier.authorityWang, ZD=rp00802en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1490153en_HK
dc.identifier.scopuseid_2-s2.0-0036678076en_HK
dc.identifier.hkuros74835-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036678076&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1406en_HK
dc.identifier.epage1410en_HK
dc.identifier.isiWOS:000176907700036-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, G=26643363900en_HK
dc.identifier.scopusauthoridZhou, HD=16228897100en_HK
dc.identifier.scopusauthoridFeng, SJ=7402531458en_HK
dc.identifier.scopusauthoridFan, XJ=7403393966en_HK
dc.identifier.scopusauthoridLi, XG=8093673500en_HK
dc.identifier.scopusauthoridWang, ZD=14828459100en_HK

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