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Article: Barrier height change in very thin SiO2 films caused by charge injection

TitleBarrier height change in very thin SiO2 films caused by charge injection
Authors
Chen, TPLiu, YSun, CQFung, S
KeywordsChemistry engineering
Chemical engineering
Issue Date2002
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
Citation
Electrochemical And Solid-State Letters, 2002, v. 5 n. 10, p. G96-G98 How to Cite?
DOI: http://dx.doi.org/10.1149/1.1505741
AbstractIn this paper, we report an investigation of barrier height change in gate oxide caused by charge injection. By analyzing the small change in the post-stress Fowler-Nordheim (FN) tunneling current through the oxide layer, the change of the oxide barrier height due to charge injection is determined quantitatively. The barrier height changes associated with different charge-injection directions and measurement polarities for n-channel metal oxide semiconductor field-effect transistors (MOSFETs) are presented. For comparison a measurement on a p-channel MOSFET is also carried out. For all the cases, the barrier height changes always exhibit a power law dependence on injected charge.
Persistent Identifierhttp://hdl.handle.net/10722/42470
ISSN
1099-0062
2014 Impact Factor: 2.321
ISI Accession Number ID
WOS:000177714600015
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorSun, CQen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-29T08:50:40Z-
dc.date.available2007-01-29T08:50:40Z-
dc.date.issued2002en_HK
dc.identifier.citationElectrochemical And Solid-State Letters, 2002, v. 5 n. 10, p. G96-G98en_HK
dc.identifier.issn1099-0062en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42470-
dc.description.abstractIn this paper, we report an investigation of barrier height change in gate oxide caused by charge injection. By analyzing the small change in the post-stress Fowler-Nordheim (FN) tunneling current through the oxide layer, the change of the oxide barrier height due to charge injection is determined quantitatively. The barrier height changes associated with different charge-injection directions and measurement polarities for n-channel metal oxide semiconductor field-effect transistors (MOSFETs) are presented. For comparison a measurement on a p-channel MOSFET is also carried out. For all the cases, the barrier height changes always exhibit a power law dependence on injected charge.en_HK
dc.format.extent480427 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/en_HK
dc.relation.ispartofElectrochemical and Solid-State Lettersen_HK
dc.rightsReproduced with permission from Electrochemical and Solid-State Letters, v. 5 n. 10, p. G96-G98 2002. Copyright 2002, The Electrochemical Society. Permission is not needed if figures and/or tables from one ECS publication will be reused in another forthcoming ECS publicationen_HK
dc.subjectChemistry engineeringen_HK
dc.subjectChemical engineeringen_HK
dc.titleBarrier height change in very thin SiO2 films caused by charge injectionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1099-0062&volume=5&issue=10&spage=G96&epage=G98&date=2002&atitle=Barrier+height+change+in+very+thin+SiO2+films+caused+by+charge+injectionen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1149/1.1505741en_HK
dc.identifier.scopuseid_2-s2.0-0036795192en_HK
dc.identifier.hkuros74829-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036795192&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5en_HK
dc.identifier.issue10en_HK
dc.identifier.spageG96en_HK
dc.identifier.epageG98en_HK
dc.identifier.isiWOS:000177714600015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridSun, CQ=7404248313en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl1099-0062-

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