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Article: Barrier height change in very thin SiO2 films caused by charge injection

TitleBarrier height change in very thin SiO2 films caused by charge injection
Authors
KeywordsChemistry engineering
Chemical engineering
Issue Date2002
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
Citation
Electrochemical And Solid-State Letters, 2002, v. 5 n. 10, p. G96-G98 How to Cite?
AbstractIn this paper, we report an investigation of barrier height change in gate oxide caused by charge injection. By analyzing the small change in the post-stress Fowler-Nordheim (FN) tunneling current through the oxide layer, the change of the oxide barrier height due to charge injection is determined quantitatively. The barrier height changes associated with different charge-injection directions and measurement polarities for n-channel metal oxide semiconductor field-effect transistors (MOSFETs) are presented. For comparison a measurement on a p-channel MOSFET is also carried out. For all the cases, the barrier height changes always exhibit a power law dependence on injected charge.
Persistent Identifierhttp://hdl.handle.net/10722/42470
ISSN
2014 Impact Factor: 2.321
2015 SCImago Journal Rankings: 0.842
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorSun, CQen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-29T08:50:40Z-
dc.date.available2007-01-29T08:50:40Z-
dc.date.issued2002en_HK
dc.identifier.citationElectrochemical And Solid-State Letters, 2002, v. 5 n. 10, p. G96-G98en_HK
dc.identifier.issn1099-0062en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42470-
dc.description.abstractIn this paper, we report an investigation of barrier height change in gate oxide caused by charge injection. By analyzing the small change in the post-stress Fowler-Nordheim (FN) tunneling current through the oxide layer, the change of the oxide barrier height due to charge injection is determined quantitatively. The barrier height changes associated with different charge-injection directions and measurement polarities for n-channel metal oxide semiconductor field-effect transistors (MOSFETs) are presented. For comparison a measurement on a p-channel MOSFET is also carried out. For all the cases, the barrier height changes always exhibit a power law dependence on injected charge.en_HK
dc.format.extent480427 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/en_HK
dc.relation.ispartofElectrochemical and Solid-State Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsReproduced with permission from Electrochemical and Solid-State Letters, v. 5 n. 10, p. G96-G98 2002. Copyright 2002, The Electrochemical Society. Permission is not needed if figures and/or tables from one ECS publication will be reused in another forthcoming ECS publicationen_HK
dc.subjectChemistry engineeringen_HK
dc.subjectChemical engineeringen_HK
dc.titleBarrier height change in very thin SiO2 films caused by charge injectionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1099-0062&volume=5&issue=10&spage=G96&epage=G98&date=2002&atitle=Barrier+height+change+in+very+thin+SiO2+films+caused+by+charge+injectionen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1149/1.1505741en_HK
dc.identifier.scopuseid_2-s2.0-0036795192en_HK
dc.identifier.hkuros74829-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036795192&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5en_HK
dc.identifier.issue10en_HK
dc.identifier.spageG96en_HK
dc.identifier.epageG98en_HK
dc.identifier.isiWOS:000177714600015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridSun, CQ=7404248313en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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