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Conference Paper: Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

TitleGallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence
Authors
Mui, WKLui, MKLing, CCBeling, CDFung, SCheah, KWLi, KFZhao, YW
KeywordsPhysics engineering chemistry
Issue Date2002
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 2002, v. 692, p. 423-428 How to Cite?
AbstractPositron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the V GaGa sb defect, which is the proposed residual acceptor of GaSb.
Persistent Identifierhttp://hdl.handle.net/10722/42467
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorMui, WKen_HK
dc.contributor.authorLui, MKen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorLi, KFen_HK
dc.contributor.authorZhao, YWen_HK
dc.date.accessioned2007-01-29T08:50:37Z-
dc.date.available2007-01-29T08:50:37Z-
dc.date.issued2002en_HK
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2002, v. 692, p. 423-428en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42467-
dc.description.abstractPositron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the V GaGa sb defect, which is the proposed residual acceptor of GaSb.en_HK
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dc.format.extent37376 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleGallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescenceen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=692&spage=H9.5.1&epage=6&date=2002&atitle=Gallium+vacancy+in+GaSb+studied+by+positron+lifetime+spectroscopy+and+photoluminescenceen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0036058213en_HK
dc.identifier.hkuros65900-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036058213&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume692en_HK
dc.identifier.spage423en_HK
dc.identifier.epage428en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridMui, WK=6603105928en_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridLi, KF=7404989771en_HK
dc.identifier.scopusauthoridZhao, YW=55231671200en_HK
dc.identifier.issnl0272-9172-

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