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Article: Creation and suppression of point defects through a kick-out substitution process of Fe in InP

TitleCreation and suppression of point defects through a kick-out substitution process of Fe in InP
Authors
Zhao, YWDong, HWChen, YHZhang, YHJiao, JHZhao, JQLin, LYFung, S
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2002, v. 80 n. 16, p. 2878-2879 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1473695
AbstractIndium antisite defect In P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42466
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000175068900020
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorDong, HWen_HK
dc.contributor.authorChen, YHen_HK
dc.contributor.authorZhang, YHen_HK
dc.contributor.authorJiao, JHen_HK
dc.contributor.authorZhao, JQen_HK
dc.contributor.authorLin, LYen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-29T08:50:36Z-
dc.date.available2007-01-29T08:50:36Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics Letters, 2002, v. 80 n. 16, p. 2878-2879-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42466-
dc.description.abstractIndium antisite defect In P-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The In P defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.en_HK
dc.format.extent35942 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2002, v. 80 n. 16, p. 2878-2879 and may be found at https://doi.org/10.1063/1.1473695-
dc.subjectPhysics engineeringen_HK
dc.titleCreation and suppression of point defects through a kick-out substitution process of Fe in InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=80&issue=16&spage=2878&epage=2879&date=2002&atitle=Creation+and+suppression+of+point+defects+through+a+kick-out+substitution+process+of+Fe+in+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1473695en_HK
dc.identifier.scopuseid_2-s2.0-79956016974en_HK
dc.identifier.hkuros65899-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79956016974&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue16en_HK
dc.identifier.spage2878en_HK
dc.identifier.epage2879en_HK
dc.identifier.isiWOS:000175068900020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhao, YW=54780900200en_HK
dc.identifier.scopusauthoridDong, HW=7402335211en_HK
dc.identifier.scopusauthoridChen, YH=54779508800en_HK
dc.identifier.scopusauthoridZhang, YH=54780945700en_HK
dc.identifier.scopusauthoridJiao, JH=26767873600en_HK
dc.identifier.scopusauthoridZhao, JQ=54781017200en_HK
dc.identifier.scopusauthoridLin, LY=7404131111en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

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