File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Compensation defects in annealed undoped liquid encapsulated Czochralski InP

TitleCompensation defects in annealed undoped liquid encapsulated Czochralski InP
Authors
Fung, SZhao, YWXu, XLChen, XDSun, NFSun, TNZhang, RGLiu, SLYang, GYGuo, XBSun, YZYan, RYHua, QH
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 86 n. 2, p. 951-955 How to Cite?
DOI: http://dx.doi.org/10.1063/1.370830
AbstractAs-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42449
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000081171800039
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorXu, XLen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorZhang, RGen_HK
dc.contributor.authorLiu, SLen_HK
dc.contributor.authorYang, GYen_HK
dc.contributor.authorGuo, XBen_HK
dc.contributor.authorSun, YZen_HK
dc.contributor.authorYan, RYen_HK
dc.contributor.authorHua, QHen_HK
dc.date.accessioned2007-01-29T08:50:17Z-
dc.date.available2007-01-29T08:50:17Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 86 n. 2, p. 951-955-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42449-
dc.description.abstractAs-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.en_HK
dc.format.extent81976 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 86 n. 2, p. 951-955 and may be found at https://doi.org/10.1063/1.370830-
dc.subjectPhysics engineeringen_HK
dc.titleCompensation defects in annealed undoped liquid encapsulated Czochralski InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=86&issue=2&spage=951&epage=955&date=1999&atitle=Compensation+defects+in+annealed+undoped+liquid+encapsulated+Czochralski+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.370830en_HK
dc.identifier.scopuseid_2-s2.0-0000249127en_HK
dc.identifier.hkuros41290-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000249127&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue2en_HK
dc.identifier.spage951en_HK
dc.identifier.epage955en_HK
dc.identifier.isiWOS:000081171800039-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231667500en_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridZhang, RG=15724093900en_HK
dc.identifier.scopusauthoridLiu, SL=37102452500en_HK
dc.identifier.scopusauthoridYang, GY=8693019600en_HK
dc.identifier.scopusauthoridGuo, XB=36725899100en_HK
dc.identifier.scopusauthoridSun, YZ=7406433657en_HK
dc.identifier.scopusauthoridYan, RY=7103172262en_HK
dc.identifier.scopusauthoridHua, QH=36927377400en_HK
dc.identifier.issnl0021-8979-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats