File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Gallium/aluminum interdiffusion between n-GaN and sapphire

TitleGallium/aluminum interdiffusion between n-GaN and sapphire
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1998, v. 84 n. 4, p. 2355-2357 How to Cite?
AbstractThe distribution profiles of Ga and Al near the interface of the n-GaN/sapphire system were measured by x-ray energy dispersive spectroscopy (XEDS). The results are obtained by the corrected XED spectra. First, the gallium diffusing into the sapphire substrate obeys the law of remainder probability function. The gallium diffusion coefficient DGa=2.30×10-13 cm2s-1 was calculated by theoretical fitting. Second, the diffusion is associated with the GaN growth process at high temperature. Compared to the diffusion of Ga into the sapphire substrate, much less Al antidiffusion from the substrate to the GaN film, with diffusion coefficient DA1 approximately equal to 4.8×10-15 cm2s-1, was observed in the film. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42442
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorXiaoliang, Xen_HK
dc.contributor.authorYouwen, Zen_HK
dc.contributor.authorWenhong, Sen_HK
dc.contributor.authorXudong, Cen_HK
dc.contributor.authorNiefung, Sen_HK
dc.contributor.authorTongnian, Sen_HK
dc.contributor.authorChunxiang, Jen_HK
dc.date.accessioned2007-01-29T08:50:08Z-
dc.date.available2007-01-29T08:50:08Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal Of Applied Physics, 1998, v. 84 n. 4, p. 2355-2357en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42442-
dc.description.abstractThe distribution profiles of Ga and Al near the interface of the n-GaN/sapphire system were measured by x-ray energy dispersive spectroscopy (XEDS). The results are obtained by the corrected XED spectra. First, the gallium diffusing into the sapphire substrate obeys the law of remainder probability function. The gallium diffusion coefficient DGa=2.30×10-13 cm2s-1 was calculated by theoretical fitting. Second, the diffusion is associated with the GaN growth process at high temperature. Compared to the diffusion of Ga into the sapphire substrate, much less Al antidiffusion from the substrate to the GaN film, with diffusion coefficient DA1 approximately equal to 4.8×10-15 cm2s-1, was observed in the film. © 1998 American Institute of Physics.en_HK
dc.format.extent73703 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleGallium/aluminum interdiffusion between n-GaN and sapphireen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=84&issue=4&spage=2355&epage=2357&date=1998&atitle=Gallium/aluminum+interdiffusion+between+n-GaN+and+sapphireen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.368362en_HK
dc.identifier.scopuseid_2-s2.0-0001301437en_HK
dc.identifier.hkuros38915-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001301437&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue4en_HK
dc.identifier.spage2355en_HK
dc.identifier.epage2357en_HK
dc.identifier.isiWOS:000075257700095-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridXiaoliang, X=6507009961en_HK
dc.identifier.scopusauthoridYouwen, Z=6507816545en_HK
dc.identifier.scopusauthoridWenhong, S=6505697599en_HK
dc.identifier.scopusauthoridXudong, C=36883045400en_HK
dc.identifier.scopusauthoridNiefung, S=6504081827en_HK
dc.identifier.scopusauthoridTongnian, S=6506708988en_HK
dc.identifier.scopusauthoridChunxiang, J=6504026807en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats