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Article: Current-sensitive electroresistance and the response to a magnetic field in La0.8Ca0.2MnO3 epitaxial thin films

TitleCurrent-sensitive electroresistance and the response to a magnetic field in La0.8Ca0.2MnO3 epitaxial thin films
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2005, v. 97 n. 10, p. 10H706:1-3 How to Cite?
AbstractThe influence of a transport dc current on the resistivity of La0.8Ca0.2MnO3 epitaxial thin films and their response to a magnetic field has been investigated. We found that when the applied dc current exceeds a threshold value, the electric resistivity in these films could be significantly enhanced. Such observations are completely repeatable. More attractive is that the enhanced resistance turns out to be sensitive to a weak current in a wide temperature range from 10 to 300 K. Even a very small dc current could remarkably depress the high resistance, showing a colossal electroresistance (ER) effect. ER reaches ~1175% at temperatures lower than ~50 K, and ~705% at 300 K for a current changing from 0.72 to 10.5 µA. A highly nonlinear behavior of the I–V curves persists even to room temperature. Significant influence of the magnetic field on the electric transports was also observed. It is found that a low field of 0.25 T could remarkably affect the I–V curves, resulting in a considerable magnetoresistance (MR). ©2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42432
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorHu, FXen_HK
dc.date.accessioned2007-01-29T08:49:56Z-
dc.date.available2007-01-29T08:49:56Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal of Applied Physics, 2005, v. 97 n. 10, p. 10H706:1-3en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42432-
dc.description.abstractThe influence of a transport dc current on the resistivity of La0.8Ca0.2MnO3 epitaxial thin films and their response to a magnetic field has been investigated. We found that when the applied dc current exceeds a threshold value, the electric resistivity in these films could be significantly enhanced. Such observations are completely repeatable. More attractive is that the enhanced resistance turns out to be sensitive to a weak current in a wide temperature range from 10 to 300 K. Even a very small dc current could remarkably depress the high resistance, showing a colossal electroresistance (ER) effect. ER reaches ~1175% at temperatures lower than ~50 K, and ~705% at 300 K for a current changing from 0.72 to 10.5 µA. A highly nonlinear behavior of the I–V curves persists even to room temperature. Significant influence of the magnetic field on the electric transports was also observed. It is found that a low field of 0.25 T could remarkably affect the I–V curves, resulting in a considerable magnetoresistance (MR). ©2005 American Institute of Physics.en_HK
dc.format.extent60782 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleCurrent-sensitive electroresistance and the response to a magnetic field in La0.8Ca0.2MnO3 epitaxial thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=97&issue=10&spage=10H706:1&epage=3&date=2005&atitle=Current-sensitive+electroresistance+and+the+response+to+a+magnetic+field+in+La0.8Ca0.2MnO3+epitaxial+thin+filmsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1847092en_HK
dc.identifier.scopuseid_2-s2.0-20944443056-
dc.identifier.hkuros103954-
dc.identifier.isiWOS:000230168500009-

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