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Article: Modeling the optical constants of hexagonal GaN, InN, and AlN

TitleModeling the optical constants of hexagonal GaN, InN, and AlN
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1999, v. 85 n. 5, p. 2848-2853 How to Cite?
AbstractOptical constants of hexagonal GaN (in the range 1.5-10 eV), InN (in the range 2-10 eV), and AlN (in the range 6-20 eV) for E⊥c are modeled using a modification of Adachi's model of optical properties of semiconductors. Model parameters are determined using the acceptance-probability-controlled simulated annealing method. The employed model uses an adjustable broadening function instead of the conventional Lorentzian one. The broadening can vary over a range of functions with similar kernels but different wings. Therefore, excessive absorption inherent to Lorentzian broadening due to the large wings of a Lorentz function can be reduced, yielding better agreement with experimental data. As a result, excellent agreement with experimental data is obtained; the relative rms errors for the real part of the index of refraction are below 2% for all three materials, and, for the imaginary part, below 5% for GaN and below 3% for InN and AlN. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42387
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-01-29T08:48:37Z-
dc.date.available2007-01-29T08:48:37Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal Of Applied Physics, 1999, v. 85 n. 5, p. 2848-2853en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42387-
dc.description.abstractOptical constants of hexagonal GaN (in the range 1.5-10 eV), InN (in the range 2-10 eV), and AlN (in the range 6-20 eV) for E⊥c are modeled using a modification of Adachi's model of optical properties of semiconductors. Model parameters are determined using the acceptance-probability-controlled simulated annealing method. The employed model uses an adjustable broadening function instead of the conventional Lorentzian one. The broadening can vary over a range of functions with similar kernels but different wings. Therefore, excessive absorption inherent to Lorentzian broadening due to the large wings of a Lorentz function can be reduced, yielding better agreement with experimental data. As a result, excellent agreement with experimental data is obtained; the relative rms errors for the real part of the index of refraction are below 2% for all three materials, and, for the imaginary part, below 5% for GaN and below 3% for InN and AlN. © 1999 American Institute of Physics.en_HK
dc.format.extent143759 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleModeling the optical constants of hexagonal GaN, InN, and AlNen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=5&spage=2848&epage=2853&date=1999&atitle=Modeling+the+optical+constants+of+hexagonal+GaN,+InN,+and+AlNen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.369604en_HK
dc.identifier.scopuseid_2-s2.0-3242803235en_HK
dc.identifier.hkuros45265-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3242803235&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue5en_HK
dc.identifier.spage2848en_HK
dc.identifier.epage2853en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLi, EH=7201410087en_HK

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