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Article: Low-band-gap, sublimable rhenium(I) diimine complex for efficient bulk heterojunction photovoltaic devices

TitleLow-band-gap, sublimable rhenium(I) diimine complex for efficient bulk heterojunction photovoltaic devices
Authors
Wong, HLLam, LSMCheng, KWMan, KYKChan, WKKwong, CYDjurišić, AB
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 84 n. 14, p. 2557-2559 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1682676
AbstractThe fabrication of efficient bulk heterojunction photovoltaic cells using the chlorotricarbonyl rhenium(I) diimine complex as photosensitizer was discussed. The complex has a lower band gap, which can be adjusted easily by changing the structure of the ligand. The electric properties of the complex were studied using time-of-flight analysis. It was observed that the rhenium complex showed bipolar charge transport character with relatively high electron and hole mobilities.
Persistent Identifierhttp://hdl.handle.net/10722/42358
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000220586800029
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWong, HLen_HK
dc.contributor.authorLam, LSMen_HK
dc.contributor.authorCheng, KWen_HK
dc.contributor.authorMan, KYKen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorKwong, CYen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.date.accessioned2007-01-29T08:47:41Z-
dc.date.available2007-01-29T08:47:41Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 84 n. 14, p. 2557-2559-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42358-
dc.description.abstractThe fabrication of efficient bulk heterojunction photovoltaic cells using the chlorotricarbonyl rhenium(I) diimine complex as photosensitizer was discussed. The complex has a lower band gap, which can be adjusted easily by changing the structure of the ligand. The electric properties of the complex were studied using time-of-flight analysis. It was observed that the rhenium complex showed bipolar charge transport character with relatively high electron and hole mobilities.en_HK
dc.format.extent103551 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2004, v. 84 n. 14, p. 2557-2559 and may be found at https://doi.org/10.1063/1.1682676-
dc.subjectPhysics engineeringen_HK
dc.titleLow-band-gap, sublimable rhenium(I) diimine complex for efficient bulk heterojunction photovoltaic devicesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=84&issue=14&spage=2557&epage=2559&date=2004&atitle=Low-band-gap,+sublimable+rhenium(I)+diimine+complex+for+efficient+bulk+heterojunction+photovoltaic+devicesen_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1682676en_HK
dc.identifier.scopuseid_2-s2.0-2342618762en_HK
dc.identifier.hkuros85872-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2342618762&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue14en_HK
dc.identifier.spage2557en_HK
dc.identifier.epage2559en_HK
dc.identifier.isiWOS:000220586800029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWong, HL=36920239500en_HK
dc.identifier.scopusauthoridLam, LSM=7201984714en_HK
dc.identifier.scopusauthoridCheng, KW=36439221300en_HK
dc.identifier.scopusauthoridMan, KYK=8051698900en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridKwong, CY=35917741900en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.issnl0003-6951-

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