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Article: Indium-tin-oxide surface treatments: Influence on the performance of CuPc/C60 solar cells

TitleIndium-tin-oxide surface treatments: Influence on the performance of CuPc/C60 solar cells
Authors
Djurišić, ABKwong, CYChui, PCChan, WK
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2003, v. 93 n. 9, p. 5472-5479 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1565824
AbstractThe performance of organic solar cells was influenced by different indium tin oxide (ITO) surface treatments. The uses of Hall measurements, Seebeck coefficient measurements, surface sheet measurements, and surface probe microscopy to characterize ITO sustrates were discussed. The parameters of ITO such as work function, carrier concentration, sheet resistance and surface roughness were changed due to the surface treatments.
Persistent Identifierhttp://hdl.handle.net/10722/42357
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000182296700074
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorKwong, CYen_HK
dc.contributor.authorChui, PCen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2007-01-29T08:47:41Z-
dc.date.available2007-01-29T08:47:41Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal of Applied Physics, 2003, v. 93 n. 9, p. 5472-5479-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42357-
dc.description.abstractThe performance of organic solar cells was influenced by different indium tin oxide (ITO) surface treatments. The uses of Hall measurements, Seebeck coefficient measurements, surface sheet measurements, and surface probe microscopy to characterize ITO sustrates were discussed. The parameters of ITO such as work function, carrier concentration, sheet resistance and surface roughness were changed due to the surface treatments.en_HK
dc.format.extent211976 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2003, v. 93 n. 9, p. 5472-5479 and may be found at https://doi.org/10.1063/1.1565824-
dc.subjectPhysics engineeringen_HK
dc.titleIndium-tin-oxide surface treatments: Influence on the performance of CuPc/C60 solar cellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=93&issue=9&spage=5472&epage=5479&date=2003&atitle=Indium-tin-oxide+surface+treatments:+Influence+on+the+performance+of+CuPc/C60+solar+cellsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChui, PC: pcchui@hkucc.hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChui, PC=rp00114en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1565824en_HK
dc.identifier.scopuseid_2-s2.0-0037904773en_HK
dc.identifier.hkuros80213-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037904773&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume93en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5472en_HK
dc.identifier.epage5479en_HK
dc.identifier.isiWOS:000182296700074-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridKwong, CY=35917741900en_HK
dc.identifier.scopusauthoridChui, PC=13309913400en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.issnl0021-8979-

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