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Article: Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces

TitleInfluence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces
Authors
KeywordsPhysics engineering
Issue Date1995
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726 How to Cite?
AbstractThe measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42227
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:32:00Z-
dc.date.available2007-01-08T02:32:00Z-
dc.date.issued1995en_HK
dc.identifier.citationJournal Of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42227-
dc.description.abstractThe measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.en_HK
dc.format.extent409877 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfacesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=77&issue=12&spage=6724&epage=6726&date=1995&atitle=Influence+of+annealing+on+Fermi-level+pinning+and+current+transport+at+Au-si+and+Au-GaAs+Interfacesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.359089en_HK
dc.identifier.scopuseid_2-s2.0-0009321394en_HK
dc.identifier.hkuros9245-
dc.identifier.volume77en_HK
dc.identifier.issue12en_HK
dc.identifier.spage6724en_HK
dc.identifier.epage6726en_HK
dc.identifier.isiWOS:A1995RD57200098-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridLiu, YC=7410214740en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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