File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface

TitleInterpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 84 n. 13, p. 2280-2282 How to Cite?
AbstractThe anomalous temperature dependence of anti-Stokes photoluminescence (ASPL) at the GaInP2/GaAs interface was studied. A localized state luminescence model was employed to interpret the temperature-dependence of the peak position of the ASPL. The results show that the localization of the up-converted carriers plays an important role in radiative recombination producing the ASPL. The studies also show that the microscopic mechanism of thermal quenching of ASPL at GaInP2/GaAs interface is unmasked.
Persistent Identifierhttp://hdl.handle.net/10722/42223
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorDong, JRen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2007-01-08T02:31:56Z-
dc.date.available2007-01-08T02:31:56Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 84 n. 13, p. 2280-2282en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42223-
dc.description.abstractThe anomalous temperature dependence of anti-Stokes photoluminescence (ASPL) at the GaInP2/GaAs interface was studied. A localized state luminescence model was employed to interpret the temperature-dependence of the peak position of the ASPL. The results show that the localization of the up-converted carriers plays an important role in radiative recombination producing the ASPL. The studies also show that the microscopic mechanism of thermal quenching of ASPL at GaInP2/GaAs interface is unmasked.en_HK
dc.format.extent51733 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleInterpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=84&issue=13&spage=2280&epage=2282&date=2004&atitle=Interpretation+of+anomalous+temperature+dependence+of+anti-Stokes+photoluminescence+at+GaInP2/GaAs+interfaceen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1691496en_HK
dc.identifier.scopuseid_2-s2.0-2142770329en_HK
dc.identifier.hkuros85821-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2142770329&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue13en_HK
dc.identifier.spage2280en_HK
dc.identifier.epage2282en_HK
dc.identifier.isiWOS:000220591500020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridDong, JR=7403365338en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats