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Article: Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

TitleDirect determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers
Authors
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2002, v. 81 n. 16, p. 2959-2961 How to Cite?
AbstractInvestigation of variable-temperature longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons and free electrons in heteroepitaxial GaN thin films has been conducted. It is found that thermal broadening of the LO phonon-assisted photoluminescence peaks is much slower than those of the peaks of their parents so that the first-order LO peaks of the free exciton transition and the band-to-band transition can be well resolved even at room temperature, leading to a direct determination of the band A free exciton binding energy as 25.4±0.9meV. At the same time, we demonstrate that the simple hydrogenlike model still is a good approximation to describe the energy level structure of free excitons in GaN. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42208
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLiu, Wen_HK
dc.contributor.authorLi, MFen_HK
dc.date.accessioned2007-01-08T02:31:39Z-
dc.date.available2007-01-08T02:31:39Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics Letters, 2002, v. 81 n. 16, p. 2959-2961en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42208-
dc.description.abstractInvestigation of variable-temperature longitudinal optical (LO) phonon-assisted luminescence spectra of free excitons and free electrons in heteroepitaxial GaN thin films has been conducted. It is found that thermal broadening of the LO phonon-assisted photoluminescence peaks is much slower than those of the peaks of their parents so that the first-order LO peaks of the free exciton transition and the band-to-band transition can be well resolved even at room temperature, leading to a direct determination of the band A free exciton binding energy as 25.4±0.9meV. At the same time, we demonstrate that the simple hydrogenlike model still is a good approximation to describe the energy level structure of free excitons in GaN. © 2002 American Institute of Physics.en_HK
dc.format.extent60115 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleDirect determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=81&issue=16&spage=2959&epage=2961 &date=2002&atitle=Direct+determination+of+free+exciton+binding+energy+from+phonon-assisted+luminescence+spectra+in+GaN+epilayersen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1514391en_HK
dc.identifier.scopuseid_2-s2.0-79956059457en_HK
dc.identifier.hkuros74808-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79956059457&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue16en_HK
dc.identifier.spage2959en_HK
dc.identifier.epage2961en_HK
dc.identifier.isiWOS:000178460500015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLiu, W=54780122500en_HK
dc.identifier.scopusauthoridLi, MF=54780127100en_HK

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