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Article: Excellent buffer layer for growing high-quality Y-Ba-Cu-O thin films

TitleExcellent buffer layer for growing high-quality Y-Ba-Cu-O thin films
Authors
KeywordsEngineering
Engineering mechanics and materials physics
Issue Date2001
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/jmr
Citation
Journal of Materials Research, 2001, v. 16 n. 10, p. 2864-2868 How to Cite?
AbstractEu2CuO4 (ECO) has been used as a buffer layer for growing of YBa2Cu3O7-ä (YBCO) thin films on SrTiO3(100) and Y-stabilized ZrO2(100) substrates. The epitaxy, crystallinity, and surface of YBCO thin films have been significantly improved by using ECO buffer layer as investigated by x-ray diffraction, rocking curves, scanning electron microscope, surface step profiler, and x-ray small-angle reflection. The best value of the full width at half-maximum of the YBCO(005) peak can be greatly reduced down to less than 0.1°. The scanning-electron-microscope photos indicate a very smooth surface for the YBCO thin films. The average roughness is less than 5 nm over a wide scanning region of 2000 ìm. The results of x-ray small-angle reflection indicate a very clear and flat interface between YBCO and ECO layers. Meanwhile, the resistivity of ECO is about 20 times higher than that of PrBa2Cu3Oy at the boiling point of liquid nitrogen. Our results suggest that ECO should be a good barrier candidate for fabricating high-Tc superconductor junctions.
Persistent Identifierhttp://hdl.handle.net/10722/42203
ISSN
2015 Impact Factor: 1.579
2015 SCImago Journal Rankings: 0.664

 

DC FieldValueLanguage
dc.contributor.authorTang, WHen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorLiu, CXen_HK
dc.contributor.authorMai, ZHen_HK
dc.date.accessioned2007-01-08T02:31:33Z-
dc.date.available2007-01-08T02:31:33Z-
dc.date.issued2001en_HK
dc.identifier.citationJournal of Materials Research, 2001, v. 16 n. 10, p. 2864-2868en_HK
dc.identifier.issn0884-2914en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42203-
dc.description.abstractEu2CuO4 (ECO) has been used as a buffer layer for growing of YBa2Cu3O7-ä (YBCO) thin films on SrTiO3(100) and Y-stabilized ZrO2(100) substrates. The epitaxy, crystallinity, and surface of YBCO thin films have been significantly improved by using ECO buffer layer as investigated by x-ray diffraction, rocking curves, scanning electron microscope, surface step profiler, and x-ray small-angle reflection. The best value of the full width at half-maximum of the YBCO(005) peak can be greatly reduced down to less than 0.1°. The scanning-electron-microscope photos indicate a very smooth surface for the YBCO thin films. The average roughness is less than 5 nm over a wide scanning region of 2000 ìm. The results of x-ray small-angle reflection indicate a very clear and flat interface between YBCO and ECO layers. Meanwhile, the resistivity of ECO is about 20 times higher than that of PrBa2Cu3Oy at the boiling point of liquid nitrogen. Our results suggest that ECO should be a good barrier candidate for fabricating high-Tc superconductor junctions.en_HK
dc.format.extent147704 bytes-
dc.format.extent324489 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeimage/jpeg-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/jmren_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Materials Research. Copyright © Materials Research Society.en_HK
dc.subjectEngineeringen_HK
dc.subjectEngineering mechanics and materials physicsen_HK
dc.titleExcellent buffer layer for growing high-quality Y-Ba-Cu-O thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0884-2914&volume=16&issue=10&spage=2864&epage=2868&date=2001&atitle=Excellent+buffer+layer+for+growing+high-quality+Y-Ba-Cu-O+thin+filmsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0035494707-
dc.identifier.hkuros65100-

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