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Article: Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP

TitleNative donors and compensation in Fe-doped liquid encapsulated Czochralski InP
Authors
KeywordsPhysics engineering
Issue Date2001
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2001, v. 89 n. 1, p. 86-90 How to Cite?
AbstractUndoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, current-voltage (I-V), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying the IR results, it is found that the concentration of this donor defect in Fe-doped InP is much higher than that in undoped InP. This result is consistent with the observation that a much higher concentration of Fe 2+ than the apparent net donor concentration is needed to achieve the semi-insulating (SI) property in InP. By studying the I-V and IR results of Fe-doped InP wafers sliced from different positions on an ingot, the high concentration of Fe 2+ is found to correlate with the existence of this hydrogen complex. The concentration of this donor defect is high in wafers from the top of an ingot. Correspondingly, a higher concentration of Fe 2+ can be detected in these wafers. These results reveal the influence of the complex defect on the compensation and uniformity of Fe-doped SI InP materials. © 2001 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42200
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorCao, LXen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorBi, Ken_HK
dc.contributor.authorWu, Xen_HK
dc.date.accessioned2007-01-08T02:31:30Z-
dc.date.available2007-01-08T02:31:30Z-
dc.date.issued2001en_HK
dc.identifier.citationJournal of Applied Physics, 2001, v. 89 n. 1, p. 86-90-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42200-
dc.description.abstractUndoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, current-voltage (I-V), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying the IR results, it is found that the concentration of this donor defect in Fe-doped InP is much higher than that in undoped InP. This result is consistent with the observation that a much higher concentration of Fe 2+ than the apparent net donor concentration is needed to achieve the semi-insulating (SI) property in InP. By studying the I-V and IR results of Fe-doped InP wafers sliced from different positions on an ingot, the high concentration of Fe 2+ is found to correlate with the existence of this hydrogen complex. The concentration of this donor defect is high in wafers from the top of an ingot. Correspondingly, a higher concentration of Fe 2+ can be detected in these wafers. These results reveal the influence of the complex defect on the compensation and uniformity of Fe-doped SI InP materials. © 2001 American Institute of Physics.en_HK
dc.format.extent86581 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2001, v. 89 n. 1, p. 86-90 and may be found at https://doi.org/10.1063/1.1331644-
dc.subjectPhysics engineeringen_HK
dc.titleNative donors and compensation in Fe-doped liquid encapsulated Czochralski InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=89&issue=1&spage=86&epage=90&date=2001&atitle=Native+donors+and+compensation+in+Fe-doped+liquid+encapsulated+Czochralski+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1331644en_HK
dc.identifier.scopuseid_2-s2.0-18044402658en_HK
dc.identifier.hkuros56844-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-18044402658&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue1en_HK
dc.identifier.spage86en_HK
dc.identifier.epage90en_HK
dc.identifier.isiWOS:000166118900016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhao, YW=55231668100en_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridCao, LX=55239187300en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridBi, K=7004436355en_HK
dc.identifier.scopusauthoridWu, X=7407065357en_HK

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